The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering

Wuze Xie, Dongbo Wang, Fengyun Guo, Teren Liu, Shujie Jiao, Jinzhong Wang, Shiyong Gao, Qingjiang Yu, Yong Zhang, Chunyang Luan, Wenwu Cao, Liancheng Zhao

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A series of cubic MgZnO films with a band gap of 5.0 eV (240 nm) are grown on the Si substrate by radio-frequency (rf) magnetron sputtering with various annealing temperature. Highly (111) textured single phase cubic MgZnO films with enhancement of conductivities are received through thermal annealing. The effects of annealing temperature on the structural, optical and electrical properties of cubic MgZnO films have been investigated. With increasing annealing temperature, phase separation of MgZnO films has been suppressed due to the internal strain is partially relieved by the thermal annealing. In addition, the resistivity (electron mobility, carrier concentration) decrease (increase) with an increase of annealing temperature which implies that high temperature annealing could improve the crystal quality and thereby reduce the grain boundary scattering for electron transport. Our results represent a meaningful step toward fabrication of high quality cubic MgZnO thin films use in UVC region.

Original languageEnglish (US)
Pages (from-to)1644-1651
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number2
DOIs
StatePublished - Jan 1 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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