The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy

J. M. Redwing, S. Nayak, D. E. Savage, M. G. Lagally, D. F. Dawson-Elli, T. F. Kuech

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Oxygen impurities are known to degrade the bulk and heterointerfacial quality of AlxGa1-xAs/GaAs layers grown by metalorganic vapor phase epitaxy (MOVPE). We have intentionally added oxygen at the interfaces of Al0.3Ga0.7As/GaAs superlattice layers to examine its effect on interfacial and surface roughness in these structures. Small angle X-ray diffraction and atomic force microscopy (AFM) were used to quantify and compare both small scale interfacial roughness and large scale surface roughness. Interfacial oxygen incorporation was found to increase with increasing substrate misorientation angle off (100) toward the (110) and this was reflected in increased interfacial roughness. Large scale surface structures with spacings of ∼2.0 μm were observed using AFM for growth on nominally (100) substrates. The existence of these features is also indicated in X-ray correlated roughness measurements. A mechanism of preferential oxygen incorporation at surface step edges is proposed to explain the evolution of roughness in the superlattice layers.

Original languageEnglish (US)
Pages (from-to)792-798
Number of pages7
JournalJournal of Crystal Growth
Volume145
Issue number1-4
DOIs
StatePublished - Dec 2 1994

Fingerprint

Metallorganic vapor phase epitaxy
vapor phase epitaxy
roughness
Surface roughness
Impurities
impurities
Oxygen
oxygen
Atomic force microscopy
surface roughness
atomic force microscopy
Roughness measurement
Substrates
Surface structure
misalignment
x rays
spacing
gallium arsenide
X ray diffraction
X rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{446bbf30daaf4a838a92dce2e1a005c2,
title = "The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy",
abstract = "Oxygen impurities are known to degrade the bulk and heterointerfacial quality of AlxGa1-xAs/GaAs layers grown by metalorganic vapor phase epitaxy (MOVPE). We have intentionally added oxygen at the interfaces of Al0.3Ga0.7As/GaAs superlattice layers to examine its effect on interfacial and surface roughness in these structures. Small angle X-ray diffraction and atomic force microscopy (AFM) were used to quantify and compare both small scale interfacial roughness and large scale surface roughness. Interfacial oxygen incorporation was found to increase with increasing substrate misorientation angle off (100) toward the (110) and this was reflected in increased interfacial roughness. Large scale surface structures with spacings of ∼2.0 μm were observed using AFM for growth on nominally (100) substrates. The existence of these features is also indicated in X-ray correlated roughness measurements. A mechanism of preferential oxygen incorporation at surface step edges is proposed to explain the evolution of roughness in the superlattice layers.",
author = "Redwing, {J. M.} and S. Nayak and Savage, {D. E.} and Lagally, {M. G.} and Dawson-Elli, {D. F.} and Kuech, {T. F.}",
year = "1994",
month = "12",
day = "2",
doi = "10.1016/0022-0248(94)91144-4",
language = "English (US)",
volume = "145",
pages = "792--798",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy. / Redwing, J. M.; Nayak, S.; Savage, D. E.; Lagally, M. G.; Dawson-Elli, D. F.; Kuech, T. F.

In: Journal of Crystal Growth, Vol. 145, No. 1-4, 02.12.1994, p. 792-798.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy

AU - Redwing, J. M.

AU - Nayak, S.

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Dawson-Elli, D. F.

AU - Kuech, T. F.

PY - 1994/12/2

Y1 - 1994/12/2

N2 - Oxygen impurities are known to degrade the bulk and heterointerfacial quality of AlxGa1-xAs/GaAs layers grown by metalorganic vapor phase epitaxy (MOVPE). We have intentionally added oxygen at the interfaces of Al0.3Ga0.7As/GaAs superlattice layers to examine its effect on interfacial and surface roughness in these structures. Small angle X-ray diffraction and atomic force microscopy (AFM) were used to quantify and compare both small scale interfacial roughness and large scale surface roughness. Interfacial oxygen incorporation was found to increase with increasing substrate misorientation angle off (100) toward the (110) and this was reflected in increased interfacial roughness. Large scale surface structures with spacings of ∼2.0 μm were observed using AFM for growth on nominally (100) substrates. The existence of these features is also indicated in X-ray correlated roughness measurements. A mechanism of preferential oxygen incorporation at surface step edges is proposed to explain the evolution of roughness in the superlattice layers.

AB - Oxygen impurities are known to degrade the bulk and heterointerfacial quality of AlxGa1-xAs/GaAs layers grown by metalorganic vapor phase epitaxy (MOVPE). We have intentionally added oxygen at the interfaces of Al0.3Ga0.7As/GaAs superlattice layers to examine its effect on interfacial and surface roughness in these structures. Small angle X-ray diffraction and atomic force microscopy (AFM) were used to quantify and compare both small scale interfacial roughness and large scale surface roughness. Interfacial oxygen incorporation was found to increase with increasing substrate misorientation angle off (100) toward the (110) and this was reflected in increased interfacial roughness. Large scale surface structures with spacings of ∼2.0 μm were observed using AFM for growth on nominally (100) substrates. The existence of these features is also indicated in X-ray correlated roughness measurements. A mechanism of preferential oxygen incorporation at surface step edges is proposed to explain the evolution of roughness in the superlattice layers.

UR - http://www.scopus.com/inward/record.url?scp=0028761872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028761872&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)91144-4

DO - 10.1016/0022-0248(94)91144-4

M3 - Article

AN - SCOPUS:0028761872

VL - 145

SP - 792

EP - 798

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -