The effect of film edge shapes on the stress field for a multilayered semiconductor structure: A finite-element analysis study

Sergio H. Díaz Valdés, James A. Nemes, Eva Jiran

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Resolved shear stress distributions, arising from thermal stresses induced by temperature variations, are calculated near the corners of the discontinuities of SiO2 film deposited over a GaAs substrate and covered with an overlay of InGaAs. The resolved shear stress distributions are then used to determine the location and extent of the area, where dislocations are expected to occur by comparison to the critical-resolved shear stress value of the material. The implications on the stress distribution of a modification in the original shape of the film edge are illustrated and discussed as a possibility to reduce dislocation occurrence.

Original languageEnglish (US)
Pages (from-to)268-275
Number of pages8
JournalJournal of Crystal Growth
Volume178
Issue number3
StatePublished - Jul 1 1997

Fingerprint

shear stress
stress distribution
Stress concentration
Shear stress
Semiconductor materials
Finite element method
critical loading
thermal stresses
Thermal stress
discontinuity
occurrences
Substrates
Temperature
temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{d4d9ef25c2094f96a9c0e03e6657e5e2,
title = "The effect of film edge shapes on the stress field for a multilayered semiconductor structure: A finite-element analysis study",
abstract = "Resolved shear stress distributions, arising from thermal stresses induced by temperature variations, are calculated near the corners of the discontinuities of SiO2 film deposited over a GaAs substrate and covered with an overlay of InGaAs. The resolved shear stress distributions are then used to determine the location and extent of the area, where dislocations are expected to occur by comparison to the critical-resolved shear stress value of the material. The implications on the stress distribution of a modification in the original shape of the film edge are illustrated and discussed as a possibility to reduce dislocation occurrence.",
author = "{D{\'i}az Vald{\'e}s}, {Sergio H.} and Nemes, {James A.} and Eva Jiran",
year = "1997",
month = "7",
day = "1",
language = "English (US)",
volume = "178",
pages = "268--275",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3",

}

The effect of film edge shapes on the stress field for a multilayered semiconductor structure : A finite-element analysis study. / Díaz Valdés, Sergio H.; Nemes, James A.; Jiran, Eva.

In: Journal of Crystal Growth, Vol. 178, No. 3, 01.07.1997, p. 268-275.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of film edge shapes on the stress field for a multilayered semiconductor structure

T2 - A finite-element analysis study

AU - Díaz Valdés, Sergio H.

AU - Nemes, James A.

AU - Jiran, Eva

PY - 1997/7/1

Y1 - 1997/7/1

N2 - Resolved shear stress distributions, arising from thermal stresses induced by temperature variations, are calculated near the corners of the discontinuities of SiO2 film deposited over a GaAs substrate and covered with an overlay of InGaAs. The resolved shear stress distributions are then used to determine the location and extent of the area, where dislocations are expected to occur by comparison to the critical-resolved shear stress value of the material. The implications on the stress distribution of a modification in the original shape of the film edge are illustrated and discussed as a possibility to reduce dislocation occurrence.

AB - Resolved shear stress distributions, arising from thermal stresses induced by temperature variations, are calculated near the corners of the discontinuities of SiO2 film deposited over a GaAs substrate and covered with an overlay of InGaAs. The resolved shear stress distributions are then used to determine the location and extent of the area, where dislocations are expected to occur by comparison to the critical-resolved shear stress value of the material. The implications on the stress distribution of a modification in the original shape of the film edge are illustrated and discussed as a possibility to reduce dislocation occurrence.

UR - http://www.scopus.com/inward/record.url?scp=0031190387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031190387&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031190387

VL - 178

SP - 268

EP - 275

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -