The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. Van Benthem, S. J. Pennycook, P. M. Lenahan, J. T. Ryan

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Abstract

The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

Original languageEnglish (US)
Article number094108
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
StatePublished - Nov 23 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Bersuker, G., Park, C. S., Barnett, J., Lysaght, P. S., Kirsch, P. D., Young, C. D., Choi, R., Lee, B. H., Foran, B., Van Benthem, K., Pennycook, S. J., Lenahan, P. M., & Ryan, J. T. (2006). The effect of interfacial layer properties on the performance of Hf-based gate stack devices. Journal of Applied Physics, 100(9), [094108]. https://doi.org/10.1063/1.2362905