The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. Van Benthem, S. J. Pennycook, Patrick M. Lenahan, J. T. Ryan

Research output: Contribution to journalArticle

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Abstract

The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

Original languageEnglish (US)
Article number094108
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
StatePublished - Nov 23 2006

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hypoxia
electron paramagnetic resonance
transistors
energy dissipation
signatures
electron energy
permittivity
trends
oxygen
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Bersuker, G., Park, C. S., Barnett, J., Lysaght, P. S., Kirsch, P. D., Young, C. D., ... Ryan, J. T. (2006). The effect of interfacial layer properties on the performance of Hf-based gate stack devices. Journal of Applied Physics, 100(9), [094108]. https://doi.org/10.1063/1.2362905
Bersuker, G. ; Park, C. S. ; Barnett, J. ; Lysaght, P. S. ; Kirsch, P. D. ; Young, C. D. ; Choi, R. ; Lee, B. H. ; Foran, B. ; Van Benthem, K. ; Pennycook, S. J. ; Lenahan, Patrick M. ; Ryan, J. T. / The effect of interfacial layer properties on the performance of Hf-based gate stack devices. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 9.
@article{fcd4765ef8dc438c8091a875d3287eb8,
title = "The effect of interfacial layer properties on the performance of Hf-based gate stack devices",
abstract = "The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.",
author = "G. Bersuker and Park, {C. S.} and J. Barnett and Lysaght, {P. S.} and Kirsch, {P. D.} and Young, {C. D.} and R. Choi and Lee, {B. H.} and B. Foran and {Van Benthem}, K. and Pennycook, {S. J.} and Lenahan, {Patrick M.} and Ryan, {J. T.}",
year = "2006",
month = "11",
day = "23",
doi = "10.1063/1.2362905",
language = "English (US)",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Bersuker, G, Park, CS, Barnett, J, Lysaght, PS, Kirsch, PD, Young, CD, Choi, R, Lee, BH, Foran, B, Van Benthem, K, Pennycook, SJ, Lenahan, PM & Ryan, JT 2006, 'The effect of interfacial layer properties on the performance of Hf-based gate stack devices', Journal of Applied Physics, vol. 100, no. 9, 094108. https://doi.org/10.1063/1.2362905

The effect of interfacial layer properties on the performance of Hf-based gate stack devices. / Bersuker, G.; Park, C. S.; Barnett, J.; Lysaght, P. S.; Kirsch, P. D.; Young, C. D.; Choi, R.; Lee, B. H.; Foran, B.; Van Benthem, K.; Pennycook, S. J.; Lenahan, Patrick M.; Ryan, J. T.

In: Journal of Applied Physics, Vol. 100, No. 9, 094108, 23.11.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of interfacial layer properties on the performance of Hf-based gate stack devices

AU - Bersuker, G.

AU - Park, C. S.

AU - Barnett, J.

AU - Lysaght, P. S.

AU - Kirsch, P. D.

AU - Young, C. D.

AU - Choi, R.

AU - Lee, B. H.

AU - Foran, B.

AU - Van Benthem, K.

AU - Pennycook, S. J.

AU - Lenahan, Patrick M.

AU - Ryan, J. T.

PY - 2006/11/23

Y1 - 2006/11/23

N2 - The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

AB - The influence of Hf-based dielectrics on the underlying Si O2 interfacial layer (IL) in high- k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high- k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high- k -induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

UR - http://www.scopus.com/inward/record.url?scp=33751099033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751099033&partnerID=8YFLogxK

U2 - 10.1063/1.2362905

DO - 10.1063/1.2362905

M3 - Article

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 094108

ER -

Bersuker G, Park CS, Barnett J, Lysaght PS, Kirsch PD, Young CD et al. The effect of interfacial layer properties on the performance of Hf-based gate stack devices. Journal of Applied Physics. 2006 Nov 23;100(9). 094108. https://doi.org/10.1063/1.2362905