The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces

Osman El-Atwani, J. P. Allain, Anastassiya Suslova

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

Original languageEnglish (US)
Article number251606
JournalApplied Physics Letters
Volume101
Issue number25
DOIs
StatePublished - Dec 17 2012

Fingerprint

sputtering
oxides
ion scattering
irradiation
fluence
ions
oxygen
photoelectron spectroscopy
energy
spectroscopy
x rays
oxidation
thresholds
air

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{dd0607dc7bab48878c9601e5b44f04a6,
title = "The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces",
abstract = "We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on {"}oxide free{"} samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.",
author = "Osman El-Atwani and Allain, {J. P.} and Anastassiya Suslova",
year = "2012",
month = "12",
day = "17",
doi = "10.1063/1.4772980",
language = "English (US)",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces. / El-Atwani, Osman; Allain, J. P.; Suslova, Anastassiya.

In: Applied Physics Letters, Vol. 101, No. 25, 251606, 17.12.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces

AU - El-Atwani, Osman

AU - Allain, J. P.

AU - Suslova, Anastassiya

PY - 2012/12/17

Y1 - 2012/12/17

N2 - We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

AB - We have investigated the influence of native oxides on ion-sputtering- induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015-1 × 1016 cm -2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on "oxide free" samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

UR - http://www.scopus.com/inward/record.url?scp=84871819593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871819593&partnerID=8YFLogxK

U2 - 10.1063/1.4772980

DO - 10.1063/1.4772980

M3 - Article

AN - SCOPUS:84871819593

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 251606

ER -