The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

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Abstract

We use three electrically detected magnetic resonance (EDMR) approaches to explore nitric oxide (NO) annealing in 4H SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). One approach is sensitive to defects at the interface and those extending into the SiC. Two of these approaches are particularly sensitive to SiC/SiO2 interface defects. They show that NO anneals decrease the EDMR response. Since this and earlier studies indicate the ubiquitous presence of silicon vacancy centers in SiC MOSFETs, our results provide strong circumstantial evidence that these defects play an important role in limiting device performance and that NO anneals are effective in reducing their populations.

Original languageEnglish (US)
Article number193507
JournalApplied Physics Letters
Volume102
Issue number19
DOIs
StatePublished - May 13 2013

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nitric oxide
metal oxides
magnetic resonance
field effect transistors
metal oxide semiconductors
defects
silicon
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance",
abstract = "We use three electrically detected magnetic resonance (EDMR) approaches to explore nitric oxide (NO) annealing in 4H SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). One approach is sensitive to defects at the interface and those extending into the SiC. Two of these approaches are particularly sensitive to SiC/SiO2 interface defects. They show that NO anneals decrease the EDMR response. Since this and earlier studies indicate the ubiquitous presence of silicon vacancy centers in SiC MOSFETs, our results provide strong circumstantial evidence that these defects play an important role in limiting device performance and that NO anneals are effective in reducing their populations.",
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T1 - The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance

AU - Cochrane, C. J.

AU - Lenahan, Patrick M.

AU - Lelis, A. J.

PY - 2013/5/13

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N2 - We use three electrically detected magnetic resonance (EDMR) approaches to explore nitric oxide (NO) annealing in 4H SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). One approach is sensitive to defects at the interface and those extending into the SiC. Two of these approaches are particularly sensitive to SiC/SiO2 interface defects. They show that NO anneals decrease the EDMR response. Since this and earlier studies indicate the ubiquitous presence of silicon vacancy centers in SiC MOSFETs, our results provide strong circumstantial evidence that these defects play an important role in limiting device performance and that NO anneals are effective in reducing their populations.

AB - We use three electrically detected magnetic resonance (EDMR) approaches to explore nitric oxide (NO) annealing in 4H SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). One approach is sensitive to defects at the interface and those extending into the SiC. Two of these approaches are particularly sensitive to SiC/SiO2 interface defects. They show that NO anneals decrease the EDMR response. Since this and earlier studies indicate the ubiquitous presence of silicon vacancy centers in SiC MOSFETs, our results provide strong circumstantial evidence that these defects play an important role in limiting device performance and that NO anneals are effective in reducing their populations.

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