We use three electrically detected magnetic resonance (EDMR) approaches to explore nitric oxide (NO) annealing in 4H SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). One approach is sensitive to defects at the interface and those extending into the SiC. Two of these approaches are particularly sensitive to SiC/SiO2 interface defects. They show that NO anneals decrease the EDMR response. Since this and earlier studies indicate the ubiquitous presence of silicon vacancy centers in SiC MOSFETs, our results provide strong circumstantial evidence that these defects play an important role in limiting device performance and that NO anneals are effective in reducing their populations.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)