The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping

Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induce disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials, 2017
EditorsMichael Dudley, Aivars Lelis, Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty
PublisherTrans Tech Publications Ltd
Pages469-472
Number of pages4
ISBN (Print)9783035711455
DOIs
StatePublished - Jan 1 2018
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States
Duration: Sep 17 2017Sep 22 2017

Publication series

NameMaterials Science Forum
Volume924 MSF
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
CountryUnited States
CityColumbia
Period9/17/179/22/17

Fingerprint

Electron energy levels
pumping
Nitrogen
energy levels
nitrogen
Silicon
Magnetic resonance
Vacancies
magnetic resonance
field effect transistors
disorders
Atoms
silicon
atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Anders, M. A., Lenahan, P. M., & Lelis, A. J. (2018). The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping. In M. Dudley, A. Lelis, R. Stahlbush, P. Neudeck, A. Bhalla, & R. P. Devaty (Eds.), Silicon Carbide and Related Materials, 2017 (pp. 469-472). (Materials Science Forum; Vol. 924 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.924.469
Anders, Mark A. ; Lenahan, Patrick M. ; Lelis, Aivars J. / The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping. Silicon Carbide and Related Materials, 2017. editor / Michael Dudley ; Aivars Lelis ; Robert Stahlbush ; Philip Neudeck ; Anup Bhalla ; Robert P. Devaty. Trans Tech Publications Ltd, 2018. pp. 469-472 (Materials Science Forum).
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Anders, MA, Lenahan, PM & Lelis, AJ 2018, The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping. in M Dudley, A Lelis, R Stahlbush, P Neudeck, A Bhalla & RP Devaty (eds), Silicon Carbide and Related Materials, 2017. Materials Science Forum, vol. 924 MSF, Trans Tech Publications Ltd, pp. 469-472, International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 9/17/17. https://doi.org/10.4028/www.scientific.net/MSF.924.469

The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping. / Anders, Mark A.; Lenahan, Patrick M.; Lelis, Aivars J.

Silicon Carbide and Related Materials, 2017. ed. / Michael Dudley; Aivars Lelis; Robert Stahlbush; Philip Neudeck; Anup Bhalla; Robert P. Devaty. Trans Tech Publications Ltd, 2018. p. 469-472 (Materials Science Forum; Vol. 924 MSF).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induce disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.

AB - In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induce disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.

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Anders MA, Lenahan PM, Lelis AJ. The effect of nitrogen on the 4H-SiC/SiO2 interface studied with variable resonance frequency spin dependent charge pumping. In Dudley M, Lelis A, Stahlbush R, Neudeck P, Bhalla A, Devaty RP, editors, Silicon Carbide and Related Materials, 2017. Trans Tech Publications Ltd. 2018. p. 469-472. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.924.469