The effect of polarity on MOCVD growth of thick InGaN

Zakaria Y. Al Balushi, Joan M. Redwing

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10 Scopus citations

Abstract

The growth of thick III-polar and N-polar InGaN was investigated in order to understand the effect of polarity on the structural quality, surface morphology and optical properties of metalorganic chemical vapor deposition grown films. Our results demonstrate smooth (0.7 nm RMS) thick N-polar InGaN layers that are free of hexagonal hillocks and V-pits. An enhancement in the indium incorporation was observed in the N-polar InGaN (∼13.0%) when compared to III-polar films (∼7.5%) grown under identical conditions. These results provide an alternative route to the fabrication of thick InGaN for use in strain reducing schemes for deep-green and red emitters.

Original languageEnglish (US)
Article number022101
JournalApplied Physics Letters
Volume110
Issue number2
DOIs
StatePublished - Jan 9 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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