The effect of pump rate and filling on hemolysis in a pulsatile left ventricular assist device (LVAD)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

An in-vitro hemolysis study has been conducted in order to determine the effects of pump rate and pump filling in the Penn State-Arrow left ventricular assist device. The nominal pump rates observed were 120 or 70 beats per minute, and the nominal pump filling was maintained in either the normal range (97%) or the abnormal range (84%). A new small volume mock circulatory loop has been designed and assembled which closely mimics clinical operating conditions. This study showed that incomplete filling is more hemolytic than increased pump rate in the case of these nominal parameters.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 28th Annual Northeast Bioengineering Conference, NEBC 2002
EditorsDalia El-Sherif, Karen Moxon, Saravanan Kanakasabai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages181-182
Number of pages2
ISBN (Electronic)0780374193
DOIs
StatePublished - Jan 1 2002
Event28th IEEE Annual Northeast Bioengineering Conference, NEBC 2002 - Philadelphia, United States
Duration: Apr 20 2002Apr 21 2002

Publication series

NameProceedings of the IEEE Annual Northeast Bioengineering Conference, NEBEC
Volume2002-January
ISSN (Print)1071-121X
ISSN (Electronic)2160-7001

Other

Other28th IEEE Annual Northeast Bioengineering Conference, NEBC 2002
CountryUnited States
CityPhiladelphia
Period4/20/024/21/02

All Science Journal Classification (ASJC) codes

  • Bioengineering

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  • Cite this

    Lukic, B., & Weiss, W. (2002). The effect of pump rate and filling on hemolysis in a pulsatile left ventricular assist device (LVAD). In D. El-Sherif, K. Moxon, & S. Kanakasabai (Eds.), Proceedings of the IEEE 28th Annual Northeast Bioengineering Conference, NEBC 2002 (pp. 181-182). [999525] (Proceedings of the IEEE Annual Northeast Bioengineering Conference, NEBEC; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEBC.2002.999525