Abstract
The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.
| Original language | English (US) |
|---|---|
| Article number | 053710 |
| Journal | Journal of Applied Physics |
| Volume | 101 |
| Issue number | 5 |
| DOIs | |
| State | Published - Mar 23 2007 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates. / Xu, Zhou; Edgar, J. H.; Look, D. C.; Baumann, S.; Bleiler, R. J.; Wang, S. H.; Mohney, S. E.
In: Journal of Applied Physics, Vol. 101, No. 5, 053710, 23.03.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates
AU - Xu, Zhou
AU - Edgar, J. H.
AU - Look, D. C.
AU - Baumann, S.
AU - Bleiler, R. J.
AU - Wang, S. H.
AU - Mohney, S. E.
PY - 2007/3/23
Y1 - 2007/3/23
N2 - The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.
AB - The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.
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U2 - 10.1063/1.2437687
DO - 10.1063/1.2437687
M3 - Article
AN - SCOPUS:33947330304
VL - 101
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
M1 - 053710
ER -