The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates

Zhou Xu, J. H. Edgar, D. C. Look, S. Baumann, R. J. Bleiler, S. H. Wang, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.

Original languageEnglish (US)
Article number053710
JournalJournal of Applied Physics
Volume101
Issue number5
DOIs
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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