The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates

Zhou Xu; J. H. Edgar; D. C. Look; S. Baumann; R. J. Bleiler; S. H. Wang; S. E. Mohney

doi:10.1063/1.2437687

The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates

Zhou Xu, J. H. Edgar, D. C. Look, S. Baumann, R. J. Bleiler, S. H. Wang, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.

Original language	English (US)
Article number	053710
Journal	Journal of Applied Physics
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.2437687
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.2437687

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title = "The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates",

abstract = "The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.",

author = "Zhou Xu and Edgar, {J. H.} and Look, {D. C.} and S. Baumann and Bleiler, {R. J.} and Wang, {S. H.} and Mohney, {S. E.}",

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T1 - The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates

AU - Xu, Zhou

AU - Edgar, J. H.

AU - Look, D. C.

AU - Baumann, S.

AU - Bleiler, R. J.

AU - Wang, S. H.

AU - Mohney, S. E.

PY - 2007

Y1 - 2007

N2 - The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.

AB - The ability to control the resistivity of the wide band gap semiconductor B12 As2 by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B12 As2 thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B12 As2 thin films from 7× 1018 to 7× 1021 at. cm3 (as measured by secondary ion mass spectrometry) decreased the resistivities of the p -type B12 As2 films from 2× 105 to 10 cm. The resistivities of the B12 As2 films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B12 As2 films with annealing.

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