The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Samia A. Suliman, Osama O. Awadelkarim, S. J. Fonash, G. M. Dolny, J. Hao, R. S. Ridley, C. M. Knoedler

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the effects of channel doping on the performance and hot electron stress (HES) reliability of U-shaped trench gate metal-oxide-silicon field-effect transistors (UMOSFETs). The boron-doped n-channel UMOSFETs are examined using transistor parameters and charge pumping current measurements. It is shown that increasing boron doping of the channel degrades UMOSFETs performance via decreasing the effective electron mobility in the channel and increasing the electron drift resistance in the drain region of the device. It is shown that increasing the boron doping of the channel does not increase interface trap density, which is a major cause for mobility reduction in MOSFETs: instead, ionized impurity scattering in the channel as well as the electric field transverse to the device channel, both of enhanced by doping, are argued to primarily cause the observed degradation in the electron mobility. The UMOSFETs response to HES is observed to be dependent on the doping level of the channel and is discussed in terms of the hot electron energy and its influence by channel doping.

Original languageEnglish (US)
Pages (from-to)655-661
Number of pages7
JournalSolid-State Electronics
Volume45
Issue number5
DOIs
StatePublished - May 1 2001

Fingerprint

silicon transistors
Boron
Hot electrons
Silicon oxides
Field effect transistors
hot electrons
metal oxides
boron
field effect transistors
Metals
Doping (additives)
electrons
Electron mobility
electron mobility
Electric current measurement
Transistors
causes
Electric fields
Scattering
Impurities

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Suliman, Samia A. ; Awadelkarim, Osama O. ; Fonash, S. J. ; Dolny, G. M. ; Hao, J. ; Ridley, R. S. ; Knoedler, C. M. / The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs. In: Solid-State Electronics. 2001 ; Vol. 45, No. 5. pp. 655-661.
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The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs. / Suliman, Samia A.; Awadelkarim, Osama O.; Fonash, S. J.; Dolny, G. M.; Hao, J.; Ridley, R. S.; Knoedler, C. M.

In: Solid-State Electronics, Vol. 45, No. 5, 01.05.2001, p. 655-661.

Research output: Contribution to journalArticle

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AU - Suliman, Samia A.

AU - Awadelkarim, Osama O.

AU - Fonash, S. J.

AU - Dolny, G. M.

AU - Hao, J.

AU - Ridley, R. S.

AU - Knoedler, C. M.

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