The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing

D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, N. L. Rowsey, M. E. Law, B. R. Tuttle, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.

Original languageEnglish (US)
Article number6359809
Pages (from-to)3087-3092
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number6
DOIs
StatePublished - 2012

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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