The effects of thermal nitridation and reoxidation on the interfacial stress and structure of silicon dioxide gate dielectrics

J. T. Yount, Patrick M. Lenahan, P. W. Wyatt

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Electron spin resonance spectroscopy is used to study the effects of thermal NH3 nitridation and subsequent reoxidation on the structure of the dielectric/silicon interface. This is accomplished by study of the P b center, an interfacial point defect. The values of g in Pb spectra observed in the nitrided oxide and reoxidized nitrided oxide systems differ from Si/SiO2 systems, suggesting that the average value of the tensile stress in the silicon substrate increases upon nitridation while reoxidation acts to return the interfacial stress to prenitridation levels. The implications of these structural changes upon device performance are discussed.

Original languageEnglish (US)
Pages (from-to)699-705
Number of pages7
JournalJournal of Applied Physics
Volume77
Issue number2
DOIs
StatePublished - Dec 1 1995

Fingerprint

silicon dioxide
oxides
silicon
tensile stress
point defects
electron paramagnetic resonance
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{1eec5dab155241c2920c4aa87b998220,
title = "The effects of thermal nitridation and reoxidation on the interfacial stress and structure of silicon dioxide gate dielectrics",
abstract = "Electron spin resonance spectroscopy is used to study the effects of thermal NH3 nitridation and subsequent reoxidation on the structure of the dielectric/silicon interface. This is accomplished by study of the P b center, an interfacial point defect. The values of g ⊥ in Pb spectra observed in the nitrided oxide and reoxidized nitrided oxide systems differ from Si/SiO2 systems, suggesting that the average value of the tensile stress in the silicon substrate increases upon nitridation while reoxidation acts to return the interfacial stress to prenitridation levels. The implications of these structural changes upon device performance are discussed.",
author = "Yount, {J. T.} and Lenahan, {Patrick M.} and Wyatt, {P. W.}",
year = "1995",
month = "12",
day = "1",
doi = "10.1063/1.359057",
language = "English (US)",
volume = "77",
pages = "699--705",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

The effects of thermal nitridation and reoxidation on the interfacial stress and structure of silicon dioxide gate dielectrics. / Yount, J. T.; Lenahan, Patrick M.; Wyatt, P. W.

In: Journal of Applied Physics, Vol. 77, No. 2, 01.12.1995, p. 699-705.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of thermal nitridation and reoxidation on the interfacial stress and structure of silicon dioxide gate dielectrics

AU - Yount, J. T.

AU - Lenahan, Patrick M.

AU - Wyatt, P. W.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Electron spin resonance spectroscopy is used to study the effects of thermal NH3 nitridation and subsequent reoxidation on the structure of the dielectric/silicon interface. This is accomplished by study of the P b center, an interfacial point defect. The values of g ⊥ in Pb spectra observed in the nitrided oxide and reoxidized nitrided oxide systems differ from Si/SiO2 systems, suggesting that the average value of the tensile stress in the silicon substrate increases upon nitridation while reoxidation acts to return the interfacial stress to prenitridation levels. The implications of these structural changes upon device performance are discussed.

AB - Electron spin resonance spectroscopy is used to study the effects of thermal NH3 nitridation and subsequent reoxidation on the structure of the dielectric/silicon interface. This is accomplished by study of the P b center, an interfacial point defect. The values of g ⊥ in Pb spectra observed in the nitrided oxide and reoxidized nitrided oxide systems differ from Si/SiO2 systems, suggesting that the average value of the tensile stress in the silicon substrate increases upon nitridation while reoxidation acts to return the interfacial stress to prenitridation levels. The implications of these structural changes upon device performance are discussed.

UR - http://www.scopus.com/inward/record.url?scp=36449003907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449003907&partnerID=8YFLogxK

U2 - 10.1063/1.359057

DO - 10.1063/1.359057

M3 - Article

VL - 77

SP - 699

EP - 705

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -