The growth and modification of materials via ion-surface processing

Luke Hanley, Susan B. Sinnott

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

A wide variety of gas phase ions with kinetic energies from 1-107 eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion-surface modification promises considerable scientific and technological advances in the new millennium.

Original languageEnglish (US)
Pages (from-to)500-522
Number of pages23
JournalSurface Science
Volume500
Issue number1-3
DOIs
StatePublished - Mar 10 2002

Fingerprint

Ions
Processing
ions
Kinetic energy
Gases
kinetic energy
vapor phases
Trace Elements
Trace elements
Power control
Sputtering
Surface treatment
trace elements
lists
Deposits
computerized simulation
sputtering
deposits
Thin films
Atoms

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{bd9c86a92a574168a3a2af4d7faef618,
title = "The growth and modification of materials via ion-surface processing",
abstract = "A wide variety of gas phase ions with kinetic energies from 1-107 eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion-surface modification promises considerable scientific and technological advances in the new millennium.",
author = "Luke Hanley and Sinnott, {Susan B.}",
year = "2002",
month = "3",
day = "10",
doi = "10.1016/S0039-6028(01)01528-X",
language = "English (US)",
volume = "500",
pages = "500--522",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

The growth and modification of materials via ion-surface processing. / Hanley, Luke; Sinnott, Susan B.

In: Surface Science, Vol. 500, No. 1-3, 10.03.2002, p. 500-522.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The growth and modification of materials via ion-surface processing

AU - Hanley, Luke

AU - Sinnott, Susan B.

PY - 2002/3/10

Y1 - 2002/3/10

N2 - A wide variety of gas phase ions with kinetic energies from 1-107 eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion-surface modification promises considerable scientific and technological advances in the new millennium.

AB - A wide variety of gas phase ions with kinetic energies from 1-107 eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion-surface modification promises considerable scientific and technological advances in the new millennium.

UR - http://www.scopus.com/inward/record.url?scp=0037050999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037050999&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(01)01528-X

DO - 10.1016/S0039-6028(01)01528-X

M3 - Article

AN - SCOPUS:0037050999

VL - 500

SP - 500

EP - 522

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -