The impact of germanium in strained Si/relaxed Si1-xGe x on carrier performance in non-degenerate and degenerate regimes

Engsiew Kang, S. Anwar, M. T. Ahmadi, Razali Ismail

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Abstract

The impact of the fraction of germanium on the carrier performance of two-dimensional strained silicon, which embraces both the non-degenerate and degenerate regimes, is developed. In this model, the Fermi integral of order zero is employed. The impact of the fraction of germanium on the relaxed Si 1-xGex substrate (x), carrier concentration and temperature is reported. It is revealed that the effect of x on the hole concentration is dominant for a normalized Fermi energy of more than three, or in other words the non-degenerate regime. On the contrary, the x gradient has less influence in the degenerate regime. Furthermore, by increasing x there is an increase in the intrinsic velocity, particularly with high carrier concentration and temperature.

Original languageEnglish (US)
Article number062001
JournalJournal of Semiconductors
Volume34
Issue number6
DOIs
StatePublished - Jun 1 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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