The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Sukwon Choi, Eric Heller, Donald Dorsey, Ramakrishna Vetury, Samuel Graham

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.

Original languageEnglish (US)
Article number164501
JournalJournal of Applied Physics
Volume114
Issue number16
DOIs
StatePublished - Oct 28 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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