The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Sukwon Choi, Eric Heller, Donald Dorsey, Ramakrishna Vetury, Samuel Graham

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.

Original languageEnglish (US)
Article number164501
JournalJournal of Applied Physics
Volume114
Issue number16
DOIs
StatePublished - Oct 28 2013

Fingerprint

high electron mobility transistors
degradation
temperature measurement
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Choi, Sukwon ; Heller, Eric ; Dorsey, Donald ; Vetury, Ramakrishna ; Graham, Samuel. / The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors. In: Journal of Applied Physics. 2013 ; Vol. 114, No. 16.
@article{09f20f724312455fae1c66363d3f1e97,
title = "The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors",
abstract = "Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.",
author = "Sukwon Choi and Eric Heller and Donald Dorsey and Ramakrishna Vetury and Samuel Graham",
year = "2013",
month = "10",
day = "28",
doi = "10.1063/1.4826524",
language = "English (US)",
volume = "114",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors. / Choi, Sukwon; Heller, Eric; Dorsey, Donald; Vetury, Ramakrishna; Graham, Samuel.

In: Journal of Applied Physics, Vol. 114, No. 16, 164501, 28.10.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

AU - Choi, Sukwon

AU - Heller, Eric

AU - Dorsey, Donald

AU - Vetury, Ramakrishna

AU - Graham, Samuel

PY - 2013/10/28

Y1 - 2013/10/28

N2 - Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.

AB - Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.

UR - http://www.scopus.com/inward/record.url?scp=84887278775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887278775&partnerID=8YFLogxK

U2 - 10.1063/1.4826524

DO - 10.1063/1.4826524

M3 - Article

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 164501

ER -