The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Samia A. Suliman, N. Gallogunta, L. Trabzon, J. Hao, G. Dolny, R. Ridley, T. Grebs, J. Benjamin, C. Kocon, J. Zeng, C. M. Knoedler, Mark William Horn, Osama O. Awadelkarim, S. J. Fonash, Jerzy Ruzyllo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy this is shown to result from gate-oxide growth non-uniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on the n-UMOSFET's performance and hot electron stress reliability as functions of the p-well doping.

Original languageEnglish (US)
Pages (from-to)308-314
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - Jan 1 2001

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Oxides
Geometry
Electric potential
Processing
Field effect transistors
Hot electrons
Electron mobility
Silicon oxides
Reactive ion etching
Metals
Cleaning
Doping (additives)
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Suliman, Samia A. ; Gallogunta, N. ; Trabzon, L. ; Hao, J. ; Dolny, G. ; Ridley, R. ; Grebs, T. ; Benjamin, J. ; Kocon, C. ; Zeng, J. ; Knoedler, C. M. ; Horn, Mark William ; Awadelkarim, Osama O. ; Fonash, S. J. ; Ruzyllo, Jerzy. / The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. In: Annual Proceedings - Reliability Physics (Symposium). 2001 ; pp. 308-314.
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Suliman, SA, Gallogunta, N, Trabzon, L, Hao, J, Dolny, G, Ridley, R, Grebs, T, Benjamin, J, Kocon, C, Zeng, J, Knoedler, CM, Horn, MW, Awadelkarim, OO, Fonash, SJ & Ruzyllo, J 2001, 'The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs', Annual Proceedings - Reliability Physics (Symposium), pp. 308-314. https://doi.org/10.1109/RELPHY.2001.922920

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. / Suliman, Samia A.; Gallogunta, N.; Trabzon, L.; Hao, J.; Dolny, G.; Ridley, R.; Grebs, T.; Benjamin, J.; Kocon, C.; Zeng, J.; Knoedler, C. M.; Horn, Mark William; Awadelkarim, Osama O.; Fonash, S. J.; Ruzyllo, Jerzy.

In: Annual Proceedings - Reliability Physics (Symposium), 01.01.2001, p. 308-314.

Research output: Contribution to journalArticle

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AU - Suliman, Samia A.

AU - Gallogunta, N.

AU - Trabzon, L.

AU - Hao, J.

AU - Dolny, G.

AU - Ridley, R.

AU - Grebs, T.

AU - Benjamin, J.

AU - Kocon, C.

AU - Zeng, J.

AU - Knoedler, C. M.

AU - Horn, Mark William

AU - Awadelkarim, Osama O.

AU - Fonash, S. J.

AU - Ruzyllo, Jerzy

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AB - We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy this is shown to result from gate-oxide growth non-uniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on the n-UMOSFET's performance and hot electron stress reliability as functions of the p-well doping.

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