The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Samia A. Suliman, N. Gallogunta, L. Trabzon, J. Hao, G. Dolny, R. Ridley, T. Grebs, J. Benjamin, C. Kocon, J. Zeng, C. M. Knoedler, Mark William Horn, Osama O. Awadelkarim, S. J. Fonash, Jerzy Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.

Original languageEnglish (US)
Title of host publication2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages308-314
Number of pages7
ISBN (Electronic)0780365879
DOIs
StatePublished - Jan 1 2001
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: Apr 30 2001May 3 2001

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2001-January
ISSN (Print)1541-7026

Other

Other39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
CountryUnited States
CityOrlando
Period4/30/015/3/01

Fingerprint

Oxides
Geometry
Electric potential
Processing
Field effect transistors
Metals
Hot electrons
Electron mobility
Silicon oxides
Reactive ion etching
Cleaning
Doping (additives)
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., ... Ruzyllo, J. (2001). The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 308-314). [922920] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922920
Suliman, Samia A. ; Gallogunta, N. ; Trabzon, L. ; Hao, J. ; Dolny, G. ; Ridley, R. ; Grebs, T. ; Benjamin, J. ; Kocon, C. ; Zeng, J. ; Knoedler, C. M. ; Horn, Mark William ; Awadelkarim, Osama O. ; Fonash, S. J. ; Ruzyllo, Jerzy. / The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 308-314 (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.",
author = "Suliman, {Samia A.} and N. Gallogunta and L. Trabzon and J. Hao and G. Dolny and R. Ridley and T. Grebs and J. Benjamin and C. Kocon and J. Zeng and Knoedler, {C. M.} and Horn, {Mark William} and Awadelkarim, {Osama O.} and Fonash, {S. J.} and Jerzy Ruzyllo",
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Suliman, SA, Gallogunta, N, Trabzon, L, Hao, J, Dolny, G, Ridley, R, Grebs, T, Benjamin, J, Kocon, C, Zeng, J, Knoedler, CM, Horn, MW, Awadelkarim, OO, Fonash, SJ & Ruzyllo, J 2001, The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. in 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual., 922920, IEEE International Reliability Physics Symposium Proceedings, vol. 2001-January, Institute of Electrical and Electronics Engineers Inc., pp. 308-314, 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001, Orlando, United States, 4/30/01. https://doi.org/10.1109/RELPHY.2001.922920

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. / Suliman, Samia A.; Gallogunta, N.; Trabzon, L.; Hao, J.; Dolny, G.; Ridley, R.; Grebs, T.; Benjamin, J.; Kocon, C.; Zeng, J.; Knoedler, C. M.; Horn, Mark William; Awadelkarim, Osama O.; Fonash, S. J.; Ruzyllo, Jerzy.

2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., 2001. p. 308-314 922920 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

AU - Suliman, Samia A.

AU - Gallogunta, N.

AU - Trabzon, L.

AU - Hao, J.

AU - Dolny, G.

AU - Ridley, R.

AU - Grebs, T.

AU - Benjamin, J.

AU - Kocon, C.

AU - Zeng, J.

AU - Knoedler, C. M.

AU - Horn, Mark William

AU - Awadelkarim, Osama O.

AU - Fonash, S. J.

AU - Ruzyllo, Jerzy

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N2 - We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.

AB - We report on the performance and reliability of n-channel U-shaped trench-gate metal-oxide-Si field-effect transistors (n-UMOSFETs). Damage induced on the trench sidewalls from the reactive ion etching of the trench is concealed by post-etch cleaning as witnessed by the independence of the effective electron mobility in the channel of the trench geometry. However, charge pumping measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage in the n-UMOSFET. Using scanning electron microscopy, this is shown to result from gate-oxide growth nonuniformity that is more pronounced at the trench bottom corners where the oxide tends to be thinnest. We also report on n-UMOSFET performance and hot electron stress reliability as functions of the p-well doping.

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M3 - Conference contribution

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 308

EP - 314

BT - 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Suliman SA, Gallogunta N, Trabzon L, Hao J, Dolny G, Ridley R et al. The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc. 2001. p. 308-314. 922920. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2001.922920