The influence of low-energy argon implantation on gallium arsenide Schottky barriers

Y. G. Wang, S Ashok

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The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 1012-101 5 cm-2. Electrical characteristics determined over a wide temperature range (77-360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (≅200 °C) implantation.

Original languageEnglish (US)
Pages (from-to)2371-2375
Number of pages5
JournalJournal of Applied Physics
Issue number6
StatePublished - Dec 1 1989


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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