The nature of the deep hole trap in mos oxides

Howard S. Witham, Patrick M. Lenahan

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have investigated hole and electron trapping events at E’ deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.

Original languageEnglish (US)
Pages (from-to)1147-1151
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume34
Issue number6
DOIs
StatePublished - Jan 1 1987

Fingerprint

Hole traps
traps
Oxides
Capacitance measurement
oxides
Voltage measurement
Oxygen vacancies
Paramagnetic resonance
Irradiation
metal oxide semiconductors
electrical measurement
Electrons
electron paramagnetic resonance
capacitance
Metals
trapping
gradients
irradiation
oxygen
electrons

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

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The nature of the deep hole trap in mos oxides. / Witham, Howard S.; Lenahan, Patrick M.

In: IEEE Transactions on Nuclear Science, Vol. 34, No. 6, 01.01.1987, p. 1147-1151.

Research output: Contribution to journalArticle

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