The nature of the deep hole trap in mos oxides

Howard S. Witham, Patrick M. Lenahan

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We have investigated hole and electron trapping events at E’ deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.

Original languageEnglish (US)
Pages (from-to)1147-1151
Number of pages5
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1987

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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