The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, Joan Marie Redwing

Research output: Contribution to journalArticle

162 Scopus citations

Abstract

The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

Original languageEnglish (US)
Pages (from-to)2099-2104
Number of pages6
JournalJournal of Applied Physics
Volume84
Issue number4
DOIs
StatePublished - Aug 15 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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