The temperature dependence of resistivity and thermoelectric power in lanthanum molybdenum oxide crystal La2Mo2O7

Mingliang Tian, Zhiqiang Mao, Yuheng Zhang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electrical resistivity, voltage - current (V-I) characteristics and thermoelectric power (TEP) at various temperatures in the quasi-two-dimensional single crystal La2Mo2U7 were measured. It was found that at 130 K the resistivity shows a metal - semiconductor transition, and the TEP has a minimum value. In the semiconducting states below 130 K, the electronic transport presents a clear non-linear behaviour. By analysis of the above data, it is indicated that above 130 K the crystal is a metal and electrons are dominant carriers; below 130 K the crystal becomes a semiconductor with a small energy gap, the two types of carrier being possibly coexistent. The anomalies of TEP and resistivity near 130 K may be associated with the formation of so-called charge-density waves due to the partial opening of a gap.

Original languageEnglish (US)
Pages (from-to)3413-3418
Number of pages6
JournalJournal of Physics Condensed Matter
Volume8
Issue number19
DOIs
StatePublished - May 6 1996

Fingerprint

lanthanum oxides
Molybdenum oxide
Lanthanum
molybdenum oxides
Thermoelectric power
temperature dependence
Crystals
electrical resistivity
Metals
Semiconductor materials
crystals
Charge density waves
metals
Temperature
Energy gap
Single crystals
anomalies
Electrons
single crystals
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "Electrical resistivity, voltage - current (V-I) characteristics and thermoelectric power (TEP) at various temperatures in the quasi-two-dimensional single crystal La2Mo2U7 were measured. It was found that at 130 K the resistivity shows a metal - semiconductor transition, and the TEP has a minimum value. In the semiconducting states below 130 K, the electronic transport presents a clear non-linear behaviour. By analysis of the above data, it is indicated that above 130 K the crystal is a metal and electrons are dominant carriers; below 130 K the crystal becomes a semiconductor with a small energy gap, the two types of carrier being possibly coexistent. The anomalies of TEP and resistivity near 130 K may be associated with the formation of so-called charge-density waves due to the partial opening of a gap.",
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The temperature dependence of resistivity and thermoelectric power in lanthanum molybdenum oxide crystal La2Mo2O7. / Tian, Mingliang; Mao, Zhiqiang; Zhang, Yuheng.

In: Journal of Physics Condensed Matter, Vol. 8, No. 19, 06.05.1996, p. 3413-3418.

Research output: Contribution to journalArticle

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AU - Tian, Mingliang

AU - Mao, Zhiqiang

AU - Zhang, Yuheng

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AB - Electrical resistivity, voltage - current (V-I) characteristics and thermoelectric power (TEP) at various temperatures in the quasi-two-dimensional single crystal La2Mo2U7 were measured. It was found that at 130 K the resistivity shows a metal - semiconductor transition, and the TEP has a minimum value. In the semiconducting states below 130 K, the electronic transport presents a clear non-linear behaviour. By analysis of the above data, it is indicated that above 130 K the crystal is a metal and electrons are dominant carriers; below 130 K the crystal becomes a semiconductor with a small energy gap, the two types of carrier being possibly coexistent. The anomalies of TEP and resistivity near 130 K may be associated with the formation of so-called charge-density waves due to the partial opening of a gap.

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