We report on the fabrication and measurements of sandwich-type tunnel junctions on the HTSC materials of the 1-2-3 type and the 80 K Bi-oxides. For the 1-2-3 materials gaplike structures were obtained with high reproducibility corresponding to a gap near 16 meV and or near 30 meV depending on the fabrication procedure of the tunnel barrier. Both results agree well with tunnel data from other groups. For the 80 K Bi-oxides a similar spread in the gap values is found comparing the results of different groups.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering