The valley hall effect in MoS2 transistors

K. F. Mak, K. L. McGill, J. Park, P. L. McEuen

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Abstract

Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall voltage whose sign is controlled by the helicity of the light. No anomalous Hall effect is observed in bilayer devices, which have crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.

Original languageEnglish (US)
Pages (from-to)1489-1492
Number of pages4
JournalScience
Volume344
Issue number6191
DOIs
StatePublished - Jan 1 2014

All Science Journal Classification (ASJC) codes

  • General

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    Mak, K. F., McGill, K. L., Park, J., & McEuen, P. L. (2014). The valley hall effect in MoS2 transistors. Science, 344(6191), 1489-1492. https://doi.org/10.1126/science.1250140