Theoretical analysis of the energy exchange and cooling in field emission from the conduction band of the n -type semiconductor

M. S. Chung, Y. J. Jang, A. Mayer, Brock Landon Weiss, N. M. Miskovsky, P. H. Cutler

Research output: Contribution to journalArticle

Abstract

Field emission has been theoretically found to contribute to the cooling only for the semiconductor cathodes. Using the formal theory developed recently by authors, the authors have calculated the energy exchange Δε as a function of temperature T and field F. It is found that the obtained Δε is positive for all T and large enough for a considerable cooling at room temperature. Even when the Joule heating is considered, field emission yields the net cooling effect. It is also found that the cooling is more effective for the n-GaN cathode than for the n-Si.

Original languageEnglish (US)
Pages (from-to)692-697
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number2
DOIs
StatePublished - Apr 20 2009

Fingerprint

n-type semiconductors
Conduction bands
Field emission
field emission
conduction bands
energy transfer
Semiconductor materials
Cooling
cooling
Cathodes
cathodes
Joule heating
Temperature
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Field emission has been theoretically found to contribute to the cooling only for the semiconductor cathodes. Using the formal theory developed recently by authors, the authors have calculated the energy exchange Δε as a function of temperature T and field F. It is found that the obtained Δε is positive for all T and large enough for a considerable cooling at room temperature. Even when the Joule heating is considered, field emission yields the net cooling effect. It is also found that the cooling is more effective for the n-GaN cathode than for the n-Si.",
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Theoretical analysis of the energy exchange and cooling in field emission from the conduction band of the n -type semiconductor. / Chung, M. S.; Jang, Y. J.; Mayer, A.; Weiss, Brock Landon; Miskovsky, N. M.; Cutler, P. H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 2, 20.04.2009, p. 692-697.

Research output: Contribution to journalArticle

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AU - Jang, Y. J.

AU - Mayer, A.

AU - Weiss, Brock Landon

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AU - Cutler, P. H.

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