Field emission has been theoretically found to contribute to the cooling only for the semiconductor cathodes. Using the formal theory developed recently by authors, the authors have calculated the energy exchange Δε as a function of temperature T and field F. It is found that the obtained Δε is positive for all T and large enough for a considerable cooling at room temperature. Even when the Joule heating is considered, field emission yields the net cooling effect. It is also found that the cooling is more effective for the n-GaN cathode than for the n-Si.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Apr 20 2009|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering