Theoretical analysis of the energy exchange and cooling in field emission from the conduction band of the n -type semiconductor

M. S. Chung, Y. J. Jang, A. Mayer, B. L. Weiss, N. M. Miskovsky, P. H. Cutler

Research output: Contribution to journalArticle

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Abstract

Field emission has been theoretically found to contribute to the cooling only for the semiconductor cathodes. Using the formal theory developed recently by authors, the authors have calculated the energy exchange Δε as a function of temperature T and field F. It is found that the obtained Δε is positive for all T and large enough for a considerable cooling at room temperature. Even when the Joule heating is considered, field emission yields the net cooling effect. It is also found that the cooling is more effective for the n-GaN cathode than for the n-Si.

Original languageEnglish (US)
Pages (from-to)692-697
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number2
DOIs
StatePublished - Apr 20 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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