Theoretical examination of the quantum-size effect in thin grey-tin films

B. I. Craig, Barbara Jane Garrison

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A theoretical treatment of the thin-film size quantization of grey-tin is presented. The energy levels describing the band gap are calculated as a function of film thickness. The calculation employs the linear combination of atomic orbitals method to construct the appropriate wave functions and considers the effect of the surface and interface electronic structure. The results compare favorably with experiment. The band gap is found to have a maximum value of approximately 430 meV for a film thickness of 40 A. The influence of the electronic structure due to the film boundaries is examined and shown to be important in order to examine the various experiments on the properties of the quantum-size effect.

Original languageEnglish (US)
Pages (from-to)8130-8135
Number of pages6
JournalPhysical Review B
Volume33
Issue number12
DOIs
StatePublished - Jan 1 1986

Fingerprint

Tin
Electronic structure
Film thickness
tin
Energy gap
film thickness
examination
electronic structure
Wave functions
Electron energy levels
energy levels
Experiments
wave functions
orbitals
Thin films
thin films

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Craig, B. I. ; Garrison, Barbara Jane. / Theoretical examination of the quantum-size effect in thin grey-tin films. In: Physical Review B. 1986 ; Vol. 33, No. 12. pp. 8130-8135.
@article{56d2e1cd25a14f8b9a751cc9c622f432,
title = "Theoretical examination of the quantum-size effect in thin grey-tin films",
abstract = "A theoretical treatment of the thin-film size quantization of grey-tin is presented. The energy levels describing the band gap are calculated as a function of film thickness. The calculation employs the linear combination of atomic orbitals method to construct the appropriate wave functions and considers the effect of the surface and interface electronic structure. The results compare favorably with experiment. The band gap is found to have a maximum value of approximately 430 meV for a film thickness of 40 A. The influence of the electronic structure due to the film boundaries is examined and shown to be important in order to examine the various experiments on the properties of the quantum-size effect.",
author = "Craig, {B. I.} and Garrison, {Barbara Jane}",
year = "1986",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.33.8130",
language = "English (US)",
volume = "33",
pages = "8130--8135",
journal = "Physical Review B",
issn = "0163-1829",
number = "12",

}

Theoretical examination of the quantum-size effect in thin grey-tin films. / Craig, B. I.; Garrison, Barbara Jane.

In: Physical Review B, Vol. 33, No. 12, 01.01.1986, p. 8130-8135.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Theoretical examination of the quantum-size effect in thin grey-tin films

AU - Craig, B. I.

AU - Garrison, Barbara Jane

PY - 1986/1/1

Y1 - 1986/1/1

N2 - A theoretical treatment of the thin-film size quantization of grey-tin is presented. The energy levels describing the band gap are calculated as a function of film thickness. The calculation employs the linear combination of atomic orbitals method to construct the appropriate wave functions and considers the effect of the surface and interface electronic structure. The results compare favorably with experiment. The band gap is found to have a maximum value of approximately 430 meV for a film thickness of 40 A. The influence of the electronic structure due to the film boundaries is examined and shown to be important in order to examine the various experiments on the properties of the quantum-size effect.

AB - A theoretical treatment of the thin-film size quantization of grey-tin is presented. The energy levels describing the band gap are calculated as a function of film thickness. The calculation employs the linear combination of atomic orbitals method to construct the appropriate wave functions and considers the effect of the surface and interface electronic structure. The results compare favorably with experiment. The band gap is found to have a maximum value of approximately 430 meV for a film thickness of 40 A. The influence of the electronic structure due to the film boundaries is examined and shown to be important in order to examine the various experiments on the properties of the quantum-size effect.

UR - http://www.scopus.com/inward/record.url?scp=33646621152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646621152&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.33.8130

DO - 10.1103/PhysRevB.33.8130

M3 - Article

AN - SCOPUS:33646621152

VL - 33

SP - 8130

EP - 8135

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 12

ER -