Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure

Y. C. Kong, R. M. Chu, Y. D. Zheng, C. H. Zhou, B. Shen, S. L. Gu, R. Zhang, P. Han, Y. Shi, R. L. Jiang

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We evaluate the Al xGa 1-xN/GaN/Al yGa 1-yN double heterostructure (DH) for heterostructure field-effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack-free Al yGa 1-yN buffer layer, so that the Al content in the Al xGa 1-xN top barrier can be improved as compared with a conventional Al xGa 1-xN/GaN single heterostructure (SH) with the same strain in the Al xGa 1-xN layer. By self-consistently solving the coupled Schrödinger and Poisson equations, we find that the two-dimensional electron gas (2DEG) sheet density in an Al 0.6Ga 0.4N/GaN/Al 0.3Ga 0.7N DH is 2.59 × 10 13 cm -2, much higher than the 1.71 × 10 13 cm -2 in a conventional A 0.3Ga 0.7N/GaN SH. The 2DEG sheet density increases with increasing Al content x and decreases slightly with increasing y. With a fixed Al content (x-y) ratio, y is the key parameter determining the 2DEG density.

Original languageEnglish (US)
Pages (from-to)1018-1023
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number5
DOIs
StatePublished - Apr 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure'. Together they form a unique fingerprint.

  • Cite this