Theory of channel hot-carrier degradation in MOSFETs

K. Hess, L. F. Register, W. McMahon, Blair Richard Tuttle, O. Aktas, U. Ravaioli, J. W. Lyding, I. C. Kizilyalli

Research output: Contribution to journalConference article

34 Citations (Scopus)

Abstract

A critical but still poorly understood process in metal-oxide-semiconductor field-effect transistors (MOSFETs) is stress-induced changes in device threshold voltage, channel conductance, etc. which limit the operating lifetimes of the transistors. However, the degradation characteristics of deep-submicron MOSFETs, the widely demonstrated deuterium/hydrogen isotope effect, and the related results of scanning-tunneling microscopy-based depassivation experiments on silicon-vacuum interfaces are providing new insights into the degradation of MOSFETs via, at least, depassivation of the silicon-oxide interface. In this manuscript, we review the basic mechanisms of depassivation, suggest disorder-induced variations in the threshold energies for silicon-hydrogen/deuterium bond breaking as a possible explanation for observed sublinear time dependencies for degradation below t0.5, and show that excitation of the vibrational modes of the bonds could play a significant role in the continuing degradation of deep-submicron MOSFETs operated at low voltages.

Original languageEnglish (US)
Pages (from-to)527-531
Number of pages5
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

Fingerprint

Hot carriers
MOSFET devices
metal oxide semiconductors
field effect transistors
degradation
Degradation
Deuterium
Silicon
deuterium
Hydrogen
hydrogen isotopes
Silicon oxides
Scanning tunneling microscopy
silicon
silicon oxides
Threshold voltage
Isotopes
threshold voltage
isotope effect
low voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Hess, K., Register, L. F., McMahon, W., Tuttle, B. R., Aktas, O., Ravaioli, U., ... Kizilyalli, I. C. (1999). Theory of channel hot-carrier degradation in MOSFETs. Physica B: Condensed Matter, 272(1-4), 527-531. https://doi.org/10.1016/S0921-4526(99)00363-4
Hess, K. ; Register, L. F. ; McMahon, W. ; Tuttle, Blair Richard ; Aktas, O. ; Ravaioli, U. ; Lyding, J. W. ; Kizilyalli, I. C. / Theory of channel hot-carrier degradation in MOSFETs. In: Physica B: Condensed Matter. 1999 ; Vol. 272, No. 1-4. pp. 527-531.
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Hess, K, Register, LF, McMahon, W, Tuttle, BR, Aktas, O, Ravaioli, U, Lyding, JW & Kizilyalli, IC 1999, 'Theory of channel hot-carrier degradation in MOSFETs', Physica B: Condensed Matter, vol. 272, no. 1-4, pp. 527-531. https://doi.org/10.1016/S0921-4526(99)00363-4

Theory of channel hot-carrier degradation in MOSFETs. / Hess, K.; Register, L. F.; McMahon, W.; Tuttle, Blair Richard; Aktas, O.; Ravaioli, U.; Lyding, J. W.; Kizilyalli, I. C.

In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 527-531.

Research output: Contribution to journalConference article

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AU - Lyding, J. W.

AU - Kizilyalli, I. C.

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Hess K, Register LF, McMahon W, Tuttle BR, Aktas O, Ravaioli U et al. Theory of channel hot-carrier degradation in MOSFETs. Physica B: Condensed Matter. 1999 Dec 1;272(1-4):527-531. https://doi.org/10.1016/S0921-4526(99)00363-4