Theory of hot-electron energy loss in polar semiconductors: Role of plasmon-phonon coupling

S. Das Sarma, Jainendra K. Jain, R. Jalabert

Research output: Contribution to journalArticlepeer-review

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Abstract

The theory for hot-electron relaxation in bulk III-V semiconductors is developed within a many-body formalism by considering energy loss to optical and acoustic phonons, with special emphasis on the influence of the plasmon-phonon coupling phenomenon. The effects of quantum statistics, screening, hot phonons, and acoustic phonons are quantified in order to assess their relative physical importance. We find that for low-electron-density samples there is a temperature range in which it is essential to include plasmon-phonon coupling in the theory, and predict how this effect will manifest itself experimentally. Our theoretical results are in good agreement with the available experimental data in GaAs and GaxIn1-xAs.

Original languageEnglish (US)
Pages (from-to)6290-6296
Number of pages7
JournalPhysical Review B
Volume37
Issue number11
DOIs
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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