Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

Blair Richard Tuttle, T. Aichinger, Patrick M. Lenahan, S. T. Pantelides

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.

Original languageEnglish (US)
Article number113712
JournalJournal of Applied Physics
Volume114
Issue number11
DOIs
StatePublished - Sep 21 2013

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diodes
nitrogen
defects
electronic levels
signatures
carbon
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{e80fa2ee712640dbb69f44c60f8e241e,
title = "Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes",
abstract = "Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.",
author = "Tuttle, {Blair Richard} and T. Aichinger and Lenahan, {Patrick M.} and Pantelides, {S. T.}",
year = "2013",
month = "9",
day = "21",
doi = "10.1063/1.4821799",
language = "English (US)",
volume = "114",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes. / Tuttle, Blair Richard; Aichinger, T.; Lenahan, Patrick M.; Pantelides, S. T.

In: Journal of Applied Physics, Vol. 114, No. 11, 113712, 21.09.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

AU - Tuttle, Blair Richard

AU - Aichinger, T.

AU - Lenahan, Patrick M.

AU - Pantelides, S. T.

PY - 2013/9/21

Y1 - 2013/9/21

N2 - Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.

AB - Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.

UR - http://www.scopus.com/inward/record.url?scp=84887439237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887439237&partnerID=8YFLogxK

U2 - 10.1063/1.4821799

DO - 10.1063/1.4821799

M3 - Article

AN - SCOPUS:84887439237

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113712

ER -