Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

B. R. Tuttle, T. Aichinger, P. M. Lenahan, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.

Original languageEnglish (US)
Article number113712
JournalJournal of Applied Physics
Volume114
Issue number11
DOIs
StatePublished - Sep 21 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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