@article{599c726b9040404b8780c631998f4aa9,
title = "Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes",
abstract = "The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes.",
author = "Yang Shen and John Gaskins and Xiaojun Xie and Foley, {Brian M.} and Ramez Cheaito and Hopkins, {Patrick E.} and Campbell, {Joe C.}",
note = "Funding Information: Manuscript received June 8, 2017; revised July 12, 2017; accepted July 31, 2017. Date of publication August 6, 2017; date of current version September 5, 2017. This work was supported by the National Science Foundation under Grant EECS-1509362. (Corresponding author: Joe C. Campbell.) Y. Shen, X. Xie, and J. C. Campbell are with the Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904 USA (e-mail: ys6y@virginia.edu; xx5wr@virginia.edu; jcc7s@virginia.edu). Publisher Copyright: {\textcopyright} 1983-2012 IEEE.",
year = "2017",
month = oct,
day = "1",
doi = "10.1109/JLT.2017.2736884",
language = "English (US)",
volume = "35",
pages = "4242--4246",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "19",
}