Thermal anneal recovery of silicon surface barriers from argon ion implantation damage

K. Giewont, S. Ashok, A. Mogro-Campero

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The recovery of the electrical properties of silicon surface barriers subject to argon ion bombardment damage by isochronal furnace annealing has been studied over the temperature range 500-1000°C. Investigation of the characteristics of Al/n-Si and Al/p-Si Schottky barriers fabricated on samples implanted with variable-dose 10 keV argon ions reveals a clear dependence of the Schottky barrier height as well as the surface dopant concentration on the anneal temperature and ion dose. The recovery of the electrical barrier is not complete even at 1000°C for argon doses exceeding 1014 cm-2, and the influence of the anneal is found to be different for n-Si and p-Si.

Original languageEnglish (US)
Pages (from-to)13-20
Number of pages8
JournalThin Solid Films
Issue number1
StatePublished - Aug 15 1986


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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