Thermal anneal recovery of silicon surface barriers from argon ion implantation damage

K. Giewont, S Ashok, A. Mogro-Campero

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The recovery of the electrical properties of silicon surface barriers subject to argon ion bombardment damage by isochronal furnace annealing has been studied over the temperature range 500-1000°C. Investigation of the characteristics of Al/n-Si and Al/p-Si Schottky barriers fabricated on samples implanted with variable-dose 10 keV argon ions reveals a clear dependence of the Schottky barrier height as well as the surface dopant concentration on the anneal temperature and ion dose. The recovery of the electrical barrier is not complete even at 1000°C for argon doses exceeding 1014 cm-2, and the influence of the anneal is found to be different for n-Si and p-Si.

Original languageEnglish (US)
Pages (from-to)13-20
Number of pages8
JournalThin Solid Films
Volume142
Issue number1
DOIs
StatePublished - Aug 15 1986

Fingerprint

Argon
Silicon
Ion implantation
ion implantation
recovery
argon
damage
Recovery
silicon
dosage
Ions
Ion bombardment
ions
Electric properties
Furnaces
Doping (additives)
Annealing
furnaces
bombardment
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Giewont, K. ; Ashok, S ; Mogro-Campero, A. / Thermal anneal recovery of silicon surface barriers from argon ion implantation damage. In: Thin Solid Films. 1986 ; Vol. 142, No. 1. pp. 13-20.
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Thermal anneal recovery of silicon surface barriers from argon ion implantation damage. / Giewont, K.; Ashok, S; Mogro-Campero, A.

In: Thin Solid Films, Vol. 142, No. 1, 15.08.1986, p. 13-20.

Research output: Contribution to journalArticle

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