Thermal characterization of gallium nitride p-i-n diodes

J. Dallas, G. Pavlidis, B. Chatterjee, J. S. Lundh, M. Ji, J. Kim, T. Kao, T. Detchprohm, R. D. Dupuis, S. Shen, S. Graham, S. Choi

Research output: Contribution to journalArticle

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Abstract

In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.

Original languageEnglish (US)
Article number073503
JournalApplied Physics Letters
Volume112
Issue number7
DOIs
StatePublished - Feb 12 2018

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p-i-n diodes
gallium nitrides
diodes
temperature measurement
sapphire
crowding
nanoparticles
physics
heating
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Dallas, J., Pavlidis, G., Chatterjee, B., Lundh, J. S., Ji, M., Kim, J., ... Choi, S. (2018). Thermal characterization of gallium nitride p-i-n diodes. Applied Physics Letters, 112(7), [073503]. https://doi.org/10.1063/1.5006796
Dallas, J. ; Pavlidis, G. ; Chatterjee, B. ; Lundh, J. S. ; Ji, M. ; Kim, J. ; Kao, T. ; Detchprohm, T. ; Dupuis, R. D. ; Shen, S. ; Graham, S. ; Choi, S. / Thermal characterization of gallium nitride p-i-n diodes. In: Applied Physics Letters. 2018 ; Vol. 112, No. 7.
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Dallas, J, Pavlidis, G, Chatterjee, B, Lundh, JS, Ji, M, Kim, J, Kao, T, Detchprohm, T, Dupuis, RD, Shen, S, Graham, S & Choi, S 2018, 'Thermal characterization of gallium nitride p-i-n diodes', Applied Physics Letters, vol. 112, no. 7, 073503. https://doi.org/10.1063/1.5006796

Thermal characterization of gallium nitride p-i-n diodes. / Dallas, J.; Pavlidis, G.; Chatterjee, B.; Lundh, J. S.; Ji, M.; Kim, J.; Kao, T.; Detchprohm, T.; Dupuis, R. D.; Shen, S.; Graham, S.; Choi, S.

In: Applied Physics Letters, Vol. 112, No. 7, 073503, 12.02.2018.

Research output: Contribution to journalArticle

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AU - Dallas, J.

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AU - Chatterjee, B.

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AU - Ji, M.

AU - Kim, J.

AU - Kao, T.

AU - Detchprohm, T.

AU - Dupuis, R. D.

AU - Shen, S.

AU - Graham, S.

AU - Choi, S.

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Dallas J, Pavlidis G, Chatterjee B, Lundh JS, Ji M, Kim J et al. Thermal characterization of gallium nitride p-i-n diodes. Applied Physics Letters. 2018 Feb 12;112(7). 073503. https://doi.org/10.1063/1.5006796