Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

M. T. Alam, M. S. Bresnehan, J. A. Robinson, M. A. Haque

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

Original languageEnglish (US)
Article number013113
JournalApplied Physics Letters
Volume104
Issue number1
DOIs
StatePublished - Jan 6 2014

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boron nitrides
thermal conductivity
vapors
microstructure
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films. / Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

In: Applied Physics Letters, Vol. 104, No. 1, 013113, 06.01.2014.

Research output: Contribution to journalArticle

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