Thermal decomposition cavities in physical vapor transport grown SiC

E. K. Sanchez, V. D. Heydemann, David W. Snyder, G. S. Rohrer, M. Skowronski

Research output: Contribution to journalConference article

Abstract

The relationship between the formation of thermal decomposition cavities and seed mounting in physical vapor transport grown silicon carbide was investigated. Experimental results indicate that voids exist in the attachment layer between the single crystal seed and graphite crucible lid. These voids lead to the formation of cavities in the seed and grown boule by local decomposition of the seed, transport of silicon bearing species across the void and the deposition of silicon on, and diffusion into, the porous graphite lid. The application of a diffusion barrier on the seed crystal backside is shown to suppress the formation of thermal decomposition cavities.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sanchez, E. K., Heydemann, V. D., Snyder, D. W., Rohrer, G. S., & Skowronski, M. (2000). Thermal decomposition cavities in physical vapor transport grown SiC. Materials Science Forum, 338.