Thermal effects in oxide TFTs

Devin A. Mourey, Dalong A. Zhao, Ho Him R. Fok, Yuanyuan V. Li, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Oxide semiconductor electronics may enable new applications including large-area, flexible, integrated systems. ZnO thin film transistors have been reported with field-effect mobility > 100 cm2/V·s, on-current density > 700 mA/mm, and microwave operation (fT > 2 GHz, fmax > 7 GHz) for ZnO deposited by pulsed laser deposition at 400°C.[1] Other oxide semiconductors, including amorphous and crystalline mixtures of I2O3, Ga2O3, ZnO, have also been widely studied, and high mobility (> 30 cm2/V·s) thin film transistors and circuits with propagation delays < 1 ns/stage have been reported.[2,3] However, most of these high performance demonstrations were done on single crystal semiconductor substrates with high thermal conductivity. Here we find that self-heating and not drain-induced barrier lowering as previously reported [1] is the physical mechanism responsible for the output conductance (gd = dIDS/dVDS) observed in a range of oxide thin film transistors. In particular we find that self-heating is a significant limiting factor for the performance of oxide devices and circuits on low-cost, low-thermal conductivity substrates such as glass and plastic.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Number of pages2
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other68th Device Research Conference, DRC 2010
Country/TerritoryUnited States
CityNotre Dame, IN

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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