Thermal effects in oxide TFTs

Devin A. Mourey, Dalong A. Zhao, Ho Him R. Fok, Yuanyuan V. Li, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Oxide semiconductor electronics may enable new applications including large-area, flexible, integrated systems. ZnO thin film transistors have been reported with field-effect mobility > 100 cm2/V·s, on-current density > 700 mA/mm, and microwave operation (fT > 2 GHz, fmax > 7 GHz) for ZnO deposited by pulsed laser deposition at 400°C.[1] Other oxide semiconductors, including amorphous and crystalline mixtures of I2O3, Ga2O3, ZnO, have also been widely studied, and high mobility (> 30 cm2/V·s) thin film transistors and circuits with propagation delays < 1 ns/stage have been reported.[2,3] However, most of these high performance demonstrations were done on single crystal semiconductor substrates with high thermal conductivity. Here we find that self-heating and not drain-induced barrier lowering as previously reported [1] is the physical mechanism responsible for the output conductance (gd = dIDS/dVDS) observed in a range of oxide thin film transistors. In particular we find that self-heating is a significant limiting factor for the performance of oxide devices and circuits on low-cost, low-thermal conductivity substrates such as glass and plastic.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Pages243-244
Number of pages2
DOIs
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period6/21/106/23/10

Fingerprint

Thin film transistors
Thermal effects
Oxides
Thermal conductivity
Thin film circuits
Heating
Substrates
Pulsed laser deposition
Oxide films
Current density
Electronic equipment
Demonstrations
Microwaves
Single crystals
Semiconductor materials
Plastics
Crystalline materials
Glass
Networks (circuits)
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Mourey, D. A., Zhao, D. A., Fok, H. H. R., Li, Y. V., & Jackson, T. N. (2010). Thermal effects in oxide TFTs. In 68th Device Research Conference, DRC 2010 (pp. 243-244). [5551976] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551976
Mourey, Devin A. ; Zhao, Dalong A. ; Fok, Ho Him R. ; Li, Yuanyuan V. ; Jackson, Thomas N. / Thermal effects in oxide TFTs. 68th Device Research Conference, DRC 2010. 2010. pp. 243-244 (Device Research Conference - Conference Digest, DRC).
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Mourey, DA, Zhao, DA, Fok, HHR, Li, YV & Jackson, TN 2010, Thermal effects in oxide TFTs. in 68th Device Research Conference, DRC 2010., 5551976, Device Research Conference - Conference Digest, DRC, pp. 243-244, 68th Device Research Conference, DRC 2010, Notre Dame, IN, United States, 6/21/10. https://doi.org/10.1109/DRC.2010.5551976

Thermal effects in oxide TFTs. / Mourey, Devin A.; Zhao, Dalong A.; Fok, Ho Him R.; Li, Yuanyuan V.; Jackson, Thomas N.

68th Device Research Conference, DRC 2010. 2010. p. 243-244 5551976 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Mourey DA, Zhao DA, Fok HHR, Li YV, Jackson TN. Thermal effects in oxide TFTs. In 68th Device Research Conference, DRC 2010. 2010. p. 243-244. 5551976. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551976