Thermal evolution of defects in semi-insulating 4H SiC

W. E. Carlos, E. R. Glaser, N. Y. Garces, B. V. Shanabrook, Mark Andrew Fanton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages531-534
Number of pages4
EditionPART 1
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Paramagnetic resonance
Defects
Photoluminescence
Annealing
Infrared radiation
Hot Temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Carlos, W. E., Glaser, E. R., Garces, N. Y., Shanabrook, B. V., & Fanton, M. A. (2006). Thermal evolution of defects in semi-insulating 4H SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 531-534). (Materials Science Forum; Vol. 527-529, No. PART 1).
Carlos, W. E. ; Glaser, E. R. ; Garces, N. Y. ; Shanabrook, B. V. ; Fanton, Mark Andrew. / Thermal evolution of defects in semi-insulating 4H SiC. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. pp. 531-534 (Materials Science Forum; PART 1).
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Carlos, WE, Glaser, ER, Garces, NY, Shanabrook, BV & Fanton, MA 2006, Thermal evolution of defects in semi-insulating 4H SiC. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 531-534, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Thermal evolution of defects in semi-insulating 4H SiC. / Carlos, W. E.; Glaser, E. R.; Garces, N. Y.; Shanabrook, B. V.; Fanton, Mark Andrew.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 531-534 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Carlos WE, Glaser ER, Garces NY, Shanabrook BV, Fanton MA. Thermal evolution of defects in semi-insulating 4H SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. 2006. p. 531-534. (Materials Science Forum; PART 1).