Thermal growth of He-cavities in Si studied by cascade implantation

E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud, S. Ashok

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Abstract

Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

Original languageEnglish (US)
Article numberE9.7
Pages (from-to)461-466
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume864
DOIs
StatePublished - Jan 1 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Ntsoenzok, E., Bouayadi, R. E., Regula, G., Pichaud, B., & Ashok, S. (2005). Thermal growth of He-cavities in Si studied by cascade implantation. Materials Research Society Symposium Proceedings, 864, 461-466. [E9.7]. https://doi.org/10.1557/proc-864-e9.7