Thermal growth of He-cavities in Si studied by cascade implantation

E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud, S. Ashok

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

Original languageEnglish (US)
Article numberE9.7
Pages (from-to)461-466
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume864
StatePublished - 2005

Fingerprint

implantation
cascades
Ostwald ripening
Helium
cavities
Silicon
Field emission
Vacancies
float zones
dosage
Microscopes
helium ions
Annealing
Ions
Fluxes
Transmission electron microscopy
field emission
microscopes
transmission electron microscopy
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Ntsoenzok, E., Bouayadi, R. E., Regula, G., Pichaud, B., & Ashok, S. (2005). Thermal growth of He-cavities in Si studied by cascade implantation. Materials Research Society Symposium - Proceedings, 864, 461-466. [E9.7].
Ntsoenzok, E. ; Bouayadi, R. El ; Regula, G. ; Pichaud, B. ; Ashok, S. / Thermal growth of He-cavities in Si studied by cascade implantation. In: Materials Research Society Symposium - Proceedings. 2005 ; Vol. 864. pp. 461-466.
@article{8f7b45993298470cb15bb0b86f60de3b,
title = "Thermal growth of He-cavities in Si studied by cascade implantation",
abstract = "Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.",
author = "E. Ntsoenzok and Bouayadi, {R. El} and G. Regula and B. Pichaud and S. Ashok",
year = "2005",
language = "English (US)",
volume = "864",
pages = "461--466",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Ntsoenzok, E, Bouayadi, RE, Regula, G, Pichaud, B & Ashok, S 2005, 'Thermal growth of He-cavities in Si studied by cascade implantation', Materials Research Society Symposium - Proceedings, vol. 864, E9.7, pp. 461-466.

Thermal growth of He-cavities in Si studied by cascade implantation. / Ntsoenzok, E.; Bouayadi, R. El; Regula, G.; Pichaud, B.; Ashok, S.

In: Materials Research Society Symposium - Proceedings, Vol. 864, E9.7, 2005, p. 461-466.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal growth of He-cavities in Si studied by cascade implantation

AU - Ntsoenzok, E.

AU - Bouayadi, R. El

AU - Regula, G.

AU - Pichaud, B.

AU - Ashok, S.

PY - 2005

Y1 - 2005

N2 - Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

AB - Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

UR - http://www.scopus.com/inward/record.url?scp=30544443797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30544443797&partnerID=8YFLogxK

M3 - Article

VL - 864

SP - 461

EP - 466

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

M1 - E9.7

ER -

Ntsoenzok E, Bouayadi RE, Regula G, Pichaud B, Ashok S. Thermal growth of He-cavities in Si studied by cascade implantation. Materials Research Society Symposium - Proceedings. 2005;864:461-466. E9.7.