Thermal investigation of high-power photodiodes

Yang Shen, John Gaskins, Xiaojun Xie, Brian M. Foley, Ramez Cheaito, Patrick E. Hopkins, Joe C. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The performance of high power photodiodes flip-chip bonded on multi-crystal aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance of submount-Ti interfaces was measured and found to be the primary impedance to heat dissipation.

Original languageEnglish (US)
Title of host publication30th Annual Conference of the IEEE Photonics Society, IPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages53-54
Number of pages2
ISBN (Electronic)9781509065783
DOIs
StatePublished - Nov 20 2017
Event30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

Name30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume2017-January

Other

Other30th Annual Conference of the IEEE Photonics Society, IPC 2017
CountryUnited States
CityLake Buena Vista
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Instrumentation

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  • Cite this

    Shen, Y., Gaskins, J., Xie, X., Foley, B. M., Cheaito, R., Hopkins, P. E., & Campbell, J. C. (2017). Thermal investigation of high-power photodiodes. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 (pp. 53-54). (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2017.8116003