Thermal moore's law and near-field thermal conductance in carbon-based electronics

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The novel thermal conductance mechanism, theoretically predicted and experimentally measured in nanotube field-effect transistors (FET), is discussed with respect to the power dissipation problem of modern carbon-based electronics. Such an effect is due to the near-field coupling of the charge carriers in the transistor channel with the local electric field of the surface electromagnetic modes. The coupling leads to a quantum electrodynamic (QED) energy exchange between the hot electrons in FET channel and the optical polar phonon bath being in thermal equilibrium with the substrate. For an example of a NT on silica, this QED coupling mechanism is shown to exceed significantly the interface Kapitza conductance, that is, the classical phonon heat transport. The QED thermal conductance is proposed to play dominant role in the energy dissipation in nanoelectronics with a hetero-interface between the device channel and the polar substrate.

Original languageEnglish (US)
Title of host publicationCarbon Nanotubes, Graphene, and Associated Devices II
DOIs
StatePublished - Nov 23 2009
EventCarbon Nanotubes, Graphene, and Associated Devices II - San Diego, CA, United States
Duration: Aug 5 2009Aug 6 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7399
ISSN (Print)0277-786X

Other

OtherCarbon Nanotubes, Graphene, and Associated Devices II
CountryUnited States
CitySan Diego, CA
Period8/5/098/6/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Rotkin, S. V. (2009). Thermal moore's law and near-field thermal conductance in carbon-based electronics. In Carbon Nanotubes, Graphene, and Associated Devices II [73990F] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7399). https://doi.org/10.1117/12.826326