Thermal stability of amorphous LaScO 3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, J. P. Maria, M. E. Hawley, B. Holländer, J. Schubert, K. Eisenbeiser

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Abstract

The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

Original languageEnglish (US)
Article number062902
JournalApplied Physics Letters
Volume89
Issue number6
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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