The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)