Thermal stability of amorphous LaScO 3 films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, Jon-Paul Maria, M. E. Hawley, B. Holländer, J. Schubert, K. Eisenbeiser

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

Original languageEnglish (US)
Article number062902
JournalApplied Physics Letters
Volume89
Issue number6
DOIs
StatePublished - Aug 18 2006

Fingerprint

thermal stability
infrared absorption
absorption spectroscopy
silicon
x ray diffraction
infrared spectroscopy
transmission electron microscopy
high resolution
molecular beams
interlayers
annealing
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Edge, L. F., Schlom, D. G., Rivillon, S., Chabal, Y. J., Agustin, M. P., Stemmer, S., ... Eisenbeiser, K. (2006). Thermal stability of amorphous LaScO 3 films on silicon. Applied Physics Letters, 89(6), [062902]. https://doi.org/10.1063/1.2222302
Edge, L. F. ; Schlom, D. G. ; Rivillon, S. ; Chabal, Y. J. ; Agustin, M. P. ; Stemmer, S. ; Lee, T. ; Kim, M. J. ; Craft, H. S. ; Maria, Jon-Paul ; Hawley, M. E. ; Holländer, B. ; Schubert, J. ; Eisenbeiser, K. / Thermal stability of amorphous LaScO 3 films on silicon. In: Applied Physics Letters. 2006 ; Vol. 89, No. 6.
@article{71ac21309a42452fb7b62684436c66de,
title = "Thermal stability of amorphous LaScO 3 films on silicon",
abstract = "The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 {\AA} of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.",
author = "Edge, {L. F.} and Schlom, {D. G.} and S. Rivillon and Chabal, {Y. J.} and Agustin, {M. P.} and S. Stemmer and T. Lee and Kim, {M. J.} and Craft, {H. S.} and Jon-Paul Maria and Hawley, {M. E.} and B. Holl{\"a}nder and J. Schubert and K. Eisenbeiser",
year = "2006",
month = "8",
day = "18",
doi = "10.1063/1.2222302",
language = "English (US)",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

Edge, LF, Schlom, DG, Rivillon, S, Chabal, YJ, Agustin, MP, Stemmer, S, Lee, T, Kim, MJ, Craft, HS, Maria, J-P, Hawley, ME, Holländer, B, Schubert, J & Eisenbeiser, K 2006, 'Thermal stability of amorphous LaScO 3 films on silicon', Applied Physics Letters, vol. 89, no. 6, 062902. https://doi.org/10.1063/1.2222302

Thermal stability of amorphous LaScO 3 films on silicon. / Edge, L. F.; Schlom, D. G.; Rivillon, S.; Chabal, Y. J.; Agustin, M. P.; Stemmer, S.; Lee, T.; Kim, M. J.; Craft, H. S.; Maria, Jon-Paul; Hawley, M. E.; Holländer, B.; Schubert, J.; Eisenbeiser, K.

In: Applied Physics Letters, Vol. 89, No. 6, 062902, 18.08.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal stability of amorphous LaScO 3 films on silicon

AU - Edge, L. F.

AU - Schlom, D. G.

AU - Rivillon, S.

AU - Chabal, Y. J.

AU - Agustin, M. P.

AU - Stemmer, S.

AU - Lee, T.

AU - Kim, M. J.

AU - Craft, H. S.

AU - Maria, Jon-Paul

AU - Hawley, M. E.

AU - Holländer, B.

AU - Schubert, J.

AU - Eisenbeiser, K.

PY - 2006/8/18

Y1 - 2006/8/18

N2 - The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

AB - The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

UR - http://www.scopus.com/inward/record.url?scp=33747121612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747121612&partnerID=8YFLogxK

U2 - 10.1063/1.2222302

DO - 10.1063/1.2222302

M3 - Article

AN - SCOPUS:33747121612

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 062902

ER -

Edge LF, Schlom DG, Rivillon S, Chabal YJ, Agustin MP, Stemmer S et al. Thermal stability of amorphous LaScO 3 films on silicon. Applied Physics Letters. 2006 Aug 18;89(6). 062902. https://doi.org/10.1063/1.2222302