Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures

M. A. Tischler, B. D. Parker, J. DeGelormo, T. N. Jackson, F. Cardone, M. S. Goorsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of uncapped rapid thermal annealing in an AsH3 ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.

Original languageEnglish (US)
Title of host publicationThird Int Conf Indium Phosphide Relat Mater
PublisherPubl by IEEE
Pages602-605
Number of pages4
ISBN (Print)0879426268
StatePublished - Dec 1 1991
EventThird International Conference on Indium Phosphide and Related Materials - Cardiff, Wales
Duration: Apr 8 1991Apr 11 1991

Publication series

NameThird Int Conf Indium Phosphide Relat Mater

Other

OtherThird International Conference on Indium Phosphide and Related Materials
CityCardiff, Wales
Period4/8/914/11/91

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Tischler, M. A., Parker, B. D., DeGelormo, J., Jackson, T. N., Cardone, F., & Goorsky, M. S. (1991). Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures. In Third Int Conf Indium Phosphide Relat Mater (pp. 602-605). (Third Int Conf Indium Phosphide Relat Mater). Publ by IEEE.