Abstract
We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.
| Original language | English (US) |
|---|---|
| Article number | 044505 |
| Journal | Journal of Applied Physics |
| Volume | 105 |
| Issue number | 4 |
| DOIs | |
| State | Published - Mar 9 2009 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors. / Dormaier, R.; Zhang, Q.; Liu, Bangzhi; Chou, Y. C.; Lange, M. D.; Yang, J. M.; Oki, A. K.; Mohney, Suzanne E.
In: Journal of Applied Physics, Vol. 105, No. 4, 044505, 09.03.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors
AU - Dormaier, R.
AU - Zhang, Q.
AU - Liu, Bangzhi
AU - Chou, Y. C.
AU - Lange, M. D.
AU - Yang, J. M.
AU - Oki, A. K.
AU - Mohney, Suzanne E.
PY - 2009/3/9
Y1 - 2009/3/9
N2 - We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.
AB - We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.
UR - http://www.scopus.com/inward/record.url?scp=61449200425&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=61449200425&partnerID=8YFLogxK
U2 - 10.1063/1.3068378
DO - 10.1063/1.3068378
M3 - Article
AN - SCOPUS:61449200425
VL - 105
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 044505
ER -