Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

R. Dormaier; Q. Zhang; B. Liu; Y. C. Chou; M. D. Lange; J. M. Yang; A. K. Oki; S. E. Mohney

doi:10.1063/1.3068378

Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

R. Dormaier, Q. Zhang, B. Liu, Y. C. Chou, M. D. Lange, J. M. Yang, A. K. Oki, S. E. Mohney

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Abstract

We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.

Original language	English (US)
Article number	044505
Journal	Journal of Applied Physics
Volume	105
Issue number	4
DOIs	https://doi.org/10.1063/1.3068378
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors",

abstract = "We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.",

author = "R. Dormaier and Q. Zhang and B. Liu and Chou, {Y. C.} and Lange, {M. D.} and Yang, {J. M.} and Oki, {A. K.} and Mohney, {S. E.}",

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language = "English (US)",

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journal = "Journal of Applied Physics",

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T1 - Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

AU - Dormaier, R.

AU - Zhang, Q.

AU - Liu, B.

AU - Chou, Y. C.

AU - Lange, M. D.

AU - Yang, J. M.

AU - Oki, A. K.

AU - Mohney, S. E.

PY - 2009

Y1 - 2009

N2 - We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.

AB - We report the thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs high electron mobility transistors. An initial drop in contact resistance correlates with consumption of the InAs electron channel through reaction of both Pd and Pt with the semiconductor heterostructure during a 3 h 175 °C anneal, as determined using transmission electron microscopy. Voids form in the unreacted Pt layer after samples are aged for 1 week at 175 °C, and they grow larger when the samples are aged for 1 week at 200 °C. The contact resistance increases by more than a factor of 2 after samples are aged for 1 week at 225 °C. We discuss the degradation of the contact resistance in light of the interfacial reactions that occur during aging.

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Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

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