Thermal stability of undoped strained Si channel SiGe heterostructures

H. Klauk, Thomas Nelson Jackson, S. F. Nelson, J. O. Chu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the thermal stability of Si/SiGe n-channel heterostructures. To eliminate the complication of dopant diffusion, we have fabricated undoped Si/SiGe heterostructure Hall effect devices. With no modulation doping used in our structures, the electron concentration in the strained Si channel is controlled from a back gate. Our devices show high electron mobility of up to 19 500 cm2/V s at 77 K and are stable with negligible 77 K mobility reduction after anneals at 800°C for 30 min and at 950°C for 3 min. These results conform well with a simulation of the diffusion of Ge into the Si channel.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

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thermal stability
modulation doping
electron mobility
Hall effect
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Thermal stability of undoped strained Si channel SiGe heterostructures. / Klauk, H.; Jackson, Thomas Nelson; Nelson, S. F.; Chu, J. O.

In: Applied Physics Letters, 01.12.1995.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal stability of undoped strained Si channel SiGe heterostructures

AU - Klauk, H.

AU - Jackson, Thomas Nelson

AU - Nelson, S. F.

AU - Chu, J. O.

PY - 1995/12/1

Y1 - 1995/12/1

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AB - We have investigated the thermal stability of Si/SiGe n-channel heterostructures. To eliminate the complication of dopant diffusion, we have fabricated undoped Si/SiGe heterostructure Hall effect devices. With no modulation doping used in our structures, the electron concentration in the strained Si channel is controlled from a back gate. Our devices show high electron mobility of up to 19 500 cm2/V s at 77 K and are stable with negligible 77 K mobility reduction after anneals at 800°C for 30 min and at 950°C for 3 min. These results conform well with a simulation of the diffusion of Ge into the Si channel.

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