Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering