Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties

Andrey V. Vasin; Sergey P. Kolesnik; Audrey A. Konchits; Vladimir S. Lysenko; Alexey N. Nazarov; Audrey V. Rusavsky; S. Ashok

Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties

Andrey V. Vasin, Sergey P. Kolesnik, Audrey A. Konchits, Vladimir S. Lysenko, Alexey N. Nazarov, Audrey V. Rusavsky, S. Ashok

Research output: Contribution to journal › Conference article › peer-review

Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

Original language	English (US)
Article number	E9.37
Pages (from-to)	527-532
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	864
State	Published - Dec 1 2005
Event	2005 materials Research Society Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{94a9069ebd66446b9d5db14b275de0b6,

title = "Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties",

abstract = "Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.",

author = "Vasin, {Andrey V.} and Kolesnik, {Sergey P.} and Konchits, {Audrey A.} and Lysenko, {Vladimir S.} and Nazarov, {Alexey N.} and Rusavsky, {Audrey V.} and S. Ashok",

year = "2005",

month = dec,

day = "1",

language = "English (US)",

volume = "864",

pages = "527--532",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

}

TY - JOUR

T1 - Thermal transformation of hydrogen bonds in a-SiC:H films

T2 - 2005 materials Research Society Spring Meeting

AU - Vasin, Andrey V.

AU - Kolesnik, Sergey P.

AU - Konchits, Audrey A.

AU - Lysenko, Vladimir S.

AU - Nazarov, Alexey N.

AU - Rusavsky, Audrey V.

AU - Ashok, S.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

AB - Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

UR - http://www.scopus.com/inward/record.url?scp=30544448278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30544448278&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:30544448278

SN - 0272-9172

VL - 864

SP - 527

EP - 532

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

M1 - E9.37

Y2 - 28 March 2005 through 1 April 2005

ER -

Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties

Abstract

All Science Journal Classification (ASJC) codes

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