Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties

Andrey V. Vasin, Sergey P. Kolesnik, Audrey A. Konchits, Vladimir S. Lysenko, Alexey N. Nazarov, Audrey V. Rusavsky, S Ashok

Research output: Contribution to journalConference article

Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

Original languageEnglish (US)
Article numberE9.37
Pages (from-to)527-532
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume864
StatePublished - Dec 1 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Fingerprint

Structural properties
Hydrogen bonds
Optical properties
Vacuum
hydrogen bonds
optical properties
Defects
vacuum
defects
Carbon
Annealing
annealing
Dangling bonds
carbon
Light emission
Silicon
Amorphous silicon
Passivation
Silicon carbide
silicon carbides

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Vasin, A. V., Kolesnik, S. P., Konchits, A. A., Lysenko, V. S., Nazarov, A. N., Rusavsky, A. V., & Ashok, S. (2005). Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties. Materials Research Society Symposium Proceedings, 864, 527-532. [E9.37].
Vasin, Andrey V. ; Kolesnik, Sergey P. ; Konchits, Audrey A. ; Lysenko, Vladimir S. ; Nazarov, Alexey N. ; Rusavsky, Audrey V. ; Ashok, S. / Thermal transformation of hydrogen bonds in a-SiC:H films : Structural and optical properties. In: Materials Research Society Symposium Proceedings. 2005 ; Vol. 864. pp. 527-532.
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abstract = "Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.",
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Vasin, AV, Kolesnik, SP, Konchits, AA, Lysenko, VS, Nazarov, AN, Rusavsky, AV & Ashok, S 2005, 'Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties', Materials Research Society Symposium Proceedings, vol. 864, E9.37, pp. 527-532.

Thermal transformation of hydrogen bonds in a-SiC:H films : Structural and optical properties. / Vasin, Andrey V.; Kolesnik, Sergey P.; Konchits, Audrey A.; Lysenko, Vladimir S.; Nazarov, Alexey N.; Rusavsky, Audrey V.; Ashok, S.

In: Materials Research Society Symposium Proceedings, Vol. 864, E9.37, 01.12.2005, p. 527-532.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Thermal transformation of hydrogen bonds in a-SiC:H films

T2 - Structural and optical properties

AU - Vasin, Andrey V.

AU - Kolesnik, Sergey P.

AU - Konchits, Audrey A.

AU - Lysenko, Vladimir S.

AU - Nazarov, Alexey N.

AU - Rusavsky, Audrey V.

AU - Ashok, S

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AB - Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

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Vasin AV, Kolesnik SP, Konchits AA, Lysenko VS, Nazarov AN, Rusavsky AV et al. Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties. Materials Research Society Symposium Proceedings. 2005 Dec 1;864:527-532. E9.37.