Thermally stable PtSi Schottky contact on n-GaN

Q. Z. Liu, L. S. Yu, S. S. Lau, J. M. Redwing, N. R. Perkins, T. F. Kuech

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Platinum suicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400°C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance-voltage (C-V), and remained unchanged after further annealing at 400 and 500°C. Upon annealing at 600°C for 1 h, the barrier height decreased to 0.74 eV (C-V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C-V). Upon annealing at 400°C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400°C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN.

Original languageEnglish (US)
Pages (from-to)1275-1277
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - Mar 10 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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