Abstract
Platinum suicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400°C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance-voltage (C-V), and remained unchanged after further annealing at 400 and 500°C. Upon annealing at 600°C for 1 h, the barrier height decreased to 0.74 eV (C-V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C-V). Upon annealing at 400°C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400°C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN.
Original language | English (US) |
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Pages (from-to) | 1275-1277 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 10 |
DOIs | |
State | Published - Mar 10 1997 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)