Thermally stable PtSi Schottky contact on n-GaN

Q. Z. Liu, L. S. Yu, S. S. Lau, J. M. Redwing, N. R. Perkins, T. F. Kuech

Research output: Contribution to journalArticle

71 Scopus citations

Abstract

Platinum suicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400°C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance-voltage (C-V), and remained unchanged after further annealing at 400 and 500°C. Upon annealing at 600°C for 1 h, the barrier height decreased to 0.74 eV (C-V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C-V). Upon annealing at 400°C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400°C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN.

Original languageEnglish (US)
Pages (from-to)1275-1277
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number10
DOIs
StatePublished - Mar 10 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Thermally stable PtSi Schottky contact on n-GaN'. Together they form a unique fingerprint.

  • Cite this

    Liu, Q. Z., Yu, L. S., Lau, S. S., Redwing, J. M., Perkins, N. R., & Kuech, T. F. (1997). Thermally stable PtSi Schottky contact on n-GaN. Applied Physics Letters, 70(10), 1275-1277. https://doi.org/10.1063/1.118551