Abstract
Platinum suicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400°C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance-voltage (C-V), and remained unchanged after further annealing at 400 and 500°C. Upon annealing at 600°C for 1 h, the barrier height decreased to 0.74 eV (C-V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C-V). Upon annealing at 400°C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400°C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1275-1277 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 10 |
| DOIs | |
| State | Published - Mar 10 1997 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Thermally stable PtSi Schottky contact on n-GaN. / Liu, Q. Z.; Yu, L. S.; Lau, S. S.; Redwing, Joan Marie; Perkins, N. R.; Kuech, T. F.
In: Applied Physics Letters, Vol. 70, No. 10, 10.03.1997, p. 1275-1277.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thermally stable PtSi Schottky contact on n-GaN
AU - Liu, Q. Z.
AU - Yu, L. S.
AU - Lau, S. S.
AU - Redwing, Joan Marie
AU - Perkins, N. R.
AU - Kuech, T. F.
PY - 1997/3/10
Y1 - 1997/3/10
N2 - Platinum suicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400°C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance-voltage (C-V), and remained unchanged after further annealing at 400 and 500°C. Upon annealing at 600°C for 1 h, the barrier height decreased to 0.74 eV (C-V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C-V). Upon annealing at 400°C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400°C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN.
AB - Platinum suicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400°C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance-voltage (C-V), and remained unchanged after further annealing at 400 and 500°C. Upon annealing at 600°C for 1 h, the barrier height decreased to 0.74 eV (C-V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C-V). Upon annealing at 400°C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400°C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN.
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U2 - 10.1063/1.118551
DO - 10.1063/1.118551
M3 - Article
VL - 70
SP - 1275
EP - 1277
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
ER -