Thermally stable rhenium Schottky contacts to n-GaN

H. S. Venugopalan, Suzanne E. Mohney

Research output: Contribution to journalArticle

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Abstract

The barrier heights of Re Schottky contacts to n-GaN were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Both techniques indicate that the barrier height increases upon annealing at 500°C for 10 min. After this anneal, a barrier height of 0.82 eV and ideality factor of 1.1 are obtained by I-V measurements performed at 150°C. The C-V measurements performed at room temperature reveal a barrier height of 1.06 eV. These barrier heights are stable upon further short term annealing at temperatures as high as 700°C. The Re Schottky contacts were also stable upon prolonged annealing for 24 h at 300°C. The Re/n-GaN Schottky diode was chosen for study because of its anticipated thermodynamic stability against metallurgical reactions.

Original languageEnglish (US)
Pages (from-to)1242-1244
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number9
DOIs
StatePublished - Dec 1 1998

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rhenium
electric contacts
electrical measurement
annealing
capacitance
Schottky diodes
thermodynamics
electric potential
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Venugopalan, H. S. ; Mohney, Suzanne E. / Thermally stable rhenium Schottky contacts to n-GaN. In: Applied Physics Letters. 1998 ; Vol. 73, No. 9. pp. 1242-1244.
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Thermally stable rhenium Schottky contacts to n-GaN. / Venugopalan, H. S.; Mohney, Suzanne E.

In: Applied Physics Letters, Vol. 73, No. 9, 01.12.1998, p. 1242-1244.

Research output: Contribution to journalArticle

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