Thermally stable ZrN(200 nm)/Zr (5 nm)/n-GaN ohmic contacts are reported. Specific contact resistances as low as 2 × 10-5 Ω cm2 are obtained after annealing in Ar at 1100°C for 1 min. Compared to previously reported TiN(200 nm)/Ti (5 nm)/n-GaN contacts, higher annealing temperatures are required to achieve ohmic behavior. This observation is attributed to slower reaction kinetics between Zr and GaN compared to Ti and GaN, as revealed by X-ray photoelectron spectroscopy depth profiles of annealed Zr/n-GaN and Ti/n-GaN contacts. The ZrN/Zr/n-GaN contacts exhibit excellent thermal stability during aging in evacuated quartz tubes at 600°C for 1000 h.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering