Thermistor having doped and undoped layers of material

Jeffery B. Fortin (Inventor)

Research output: Patent

Abstract

According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.
Original languageEnglish (US)
Patent numberUS7880580B2
StatePublished - Feb 1 2011

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