Thermodynamic considerations in the rationalization of solid-state amorphization between metals and III-V semiconductors

Y. A. Chang, F. Y. Shiau, S. L. Chen, S. E. Mohney

Research output: Contribution to conferencePaperpeer-review

Abstract

The concept of the T0 curve is introduced as a feature of the phase diagram. This curve is used to explain solubility extension and the rapid quenching of an amorphous phase from the melt in model binary systems. The thermodynamics of solid-state amorphization are similar to those of solubility extension and the formation of an amorphous phase from the melt. This phenomenon occurs in Co/GaAs couples and can be rationalized in a similar manner. An approximate thermodynamic description for the GaAs-Co join and the fact that Co is a rapid diffuser in the lattice of GaAs are used. This analysis can be applied to any metal/III-V semiconductor system provided thermodynamic information is available.

Original languageEnglish (US)
Pages187-198
Number of pages12
StatePublished - 1997
EventProceedings of the 1997 TMS Annual Meeting - Orlando, FL, USA
Duration: Feb 9 1997Feb 13 1997

Other

OtherProceedings of the 1997 TMS Annual Meeting
CityOrlando, FL, USA
Period2/9/972/13/97

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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